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The UP04311G is a composite transistor array incorporating one NPN and one PNP silicon epitaxial planar transistor within a single SSMini6-F2 package. Designed for switching and digital circuits, it integrates built-in bias resistors to reduce mounting area and assembly costs. The NPN element (Tr1) supports a collector current of 100 mA with a transition frequency of 150 MHz, while the PNP element (Tr2) handles -100 mA at 80 MHz. Both transistors feature a maximum collector-emitter voltage of 50 V and a total power dissipation rating of 125 mW.
Verify component status before design finalization as this part may be discontinued or subject to maintenance changes. Consult official manufacturer lifecycle documentation for current availability and alternative sourcing options. Ensure compliance with RoHS directives and verify that the specific ordering suffix matches the required packaging configuration.
Select this component when space constraints require dual complementary switching elements with integrated base resistors. Verify that the 100 mA collector current and 50 V breakdown voltage meet circuit requirements. Consider the 125 mW total power dissipation limit and ensure adequate thermal management for the SSMini6-F2 package during operation.
This device belongs to Panasonic's composite transistor family, specifically designed to replace separate NPN and PNP pairs. It utilizes the SSMini6-F2 surface-mount package, which measures approximately 1.6 mm by 1.6 mm. The internal structure connects the transistors with fixed bias resistors to simplify driver interface designs.
Official cross-reference data is not provided in the source material. Designers should consult the manufacturer's discontinuation notices for recommended replacement parts or updated product standards.