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The Panasonic UP04312L is a composite transistor array housed in an SSMini6-F1 package, integrating one NPN and one PNP silicon epitaxial planar transistor with built-in base resistors. It operates at a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA per element. The device features a total power dissipation rating of 125mW and transition frequencies of 150MHz for the NPN section and 80MHz for the PNP section. Internal base resistors are nominally 22kΩ with a ±30% tolerance.
Verify component status before procurement as this part may be discontinued or subject to maintenance plans. Consult official manufacturer lifecycle documentation for availability confirmation. Ensure ordering suffixes match required packaging formats. Validate RoHS compliance requirements against specific project standards prior to finalizing supply chain agreements.
Select this component when dual complementary switching is required in a minimal footprint. Verify that the 50V voltage rating and 100mA current limits accommodate peak load conditions. Confirm thermal management strategies align with the 125mW total power dissipation limit under expected ambient temperatures.
This component belongs to the UP0431 series of composite transistors manufactured by Panasonic Industry. It serves as a direct replacement for discrete resistor-transistor networks, specifically substituting combinations like UNR2212 and UNR2112. The series is designed for general-purpose electronic equipment including office machines and communication devices.
The datasheet identifies the UNR2212 and UNR2112 discrete combination as the basic equivalent part number. Verify pinout compatibility and electrical characteristics when transitioning from discrete components to this integrated solution.
The internal base resistors have a nominal value of 22 kΩ with a tolerance range of -30% to +30%.
The NPN transistor (Tr1) has a transition frequency of 150 MHz, while the PNP transistor (Tr2) has a transition frequency of 80 MHz.
The collector-emitter saturation voltage is typically 0.25 V when the collector current is 10 mA and the base current is 0.3 mA.