SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UP04314 is a composite transistor array containing one silicon NPN epitaxial planar transistor (Tr1) and one silicon PNP epitaxial planar transistor (Tr2) within a single SSMini6-F1 package. Designed for switching and digital circuits, the device integrates built-in bias resistors to reduce mounting area and assembly costs. The NPN element supports a collector current of 100 mA with a transition frequency of 150 MHz, while the PNP element handles -100 mA with an 80 MHz transition frequency. Both transistors share a maximum collector-emitter voltage rating of ±50 V and a total power dissipation limit of 125 mW at 25°C ambient temperature.
Verify component status before design finalization as maintenance or discontinuation notices may apply. Consult official manufacturer lifecycle documentation for current availability. Ensure compliance with RoHS directives during procurement. Confirm package integrity and storage conditions upon receipt to prevent degradation.
Select this component when space constraints require dual complementary transistors with pre-biasing. Verify that the required collector current does not exceed 100 mA per element. Ensure operating voltages remain within the ±50 V limits. Consider the specific transition frequencies (150 MHz for NPN, 80 MHz for PNP) for high-speed switching requirements.
This part belongs to Panasonic's Silicon NPN/PNP epitaxial planar transistor family designed for general-purpose switching applications. It serves as a direct replacement for combinations like UNR2214 and UNR2114, offering a consolidated solution for digital circuit designs requiring complementary pairs with integrated base resistors.
Public confirmed substitute part numbers are not available in the provided datasheet.