UP1966E

Overview

The UP1966E is an 85 V dual-channel gate driver designed to drive both high-side and low-side eGaN FETs in half-bridge and full-bridge topologies. It features a 0.4 Ω/0.7 Ω pull-down/pull-up resistance, a typical propagation delay of 20 ns, and fast rise/fall times of 8 ns and 4 ns respectively. The device offers adjustable turn-on/off outputs and CMOS-compatible inputs, packaged in a compact WLCSP-12-B (1.6x1.6) format.

Feature Summary

• Dual-channel architecture for driving high-side and low-side eGaN FETs
• Fast switching performance with 20 ns propagation delay
• Adjustable output timing capabilities
• CMOS-compatible input interface

Applications

• Half-bridge power converter topologies
• Full-bridge power converter topologies
• eGaN FET gate drive circuits

Procurement Notes

Verify the specific manufacturer designation, as sources reference both EPC and uPI Semiconductor for this part number. Confirm the package type matches the required WLCSP-12-B (1.6x1.6) footprint. Ensure the voltage rating aligns with the 85 V specification provided in official documentation before integration into the design.

Selection Notes

Select this component when designing GaN-based power stages requiring precise control of high-side and low-side switches. The adjustable output feature allows for optimization of switching speed to minimize losses or EMI. Verify compatibility with the target eGaN FET gate charge requirements and ensure the supply voltage supports the 85 V operating range.

Part Context

This component belongs to the family of gate drivers optimized for Gallium Nitride (GaN) field-effect transistors. It serves as a critical interface between logic-level control signals and the power stage, enabling efficient operation in modern high-frequency power conversion systems utilizing eGaN technology.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.