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The UPA675T-T1-A is a dual P-channel MOSFET manufactured by Renesas Electronics. It utilizes silicon technology and is housed in an SC-88-6 surface-mount package. The device features a drain-source breakdown voltage of 20 V and supports a continuous drain current of 250 mA. Its on-resistance is specified at 1.45 Ohms, with a gate-source voltage range of -12 V to +12 V. Power dissipation is rated at 200 mW, and the unit operates within a temperature range of -55°C to +150°C.
Verify component authenticity through official Renesas channels or authorized distributors. Confirm the specific manufacturing date code and lot number against the provided datasheet revision. Ensure storage conditions comply with moisture sensitivity level requirements to prevent package damage prior to soldering.
Select this component when a compact dual P-channel solution is required for low-current switching tasks. The SC-88-6 package suits space-constrained designs. Evaluate the 1.45 Ohm on-resistance against total power loss calculations to ensure thermal performance remains within the 200 mW dissipation limit under expected load conditions.
This part belongs to the Renesas UPA series of discrete power transistors. The series focuses on providing reliable switching capabilities in small form factors suitable for portable electronics and consumer devices. The UPA675T-T1-A specifically addresses needs for dual-channel control in minimal board space.
Consult official Renesas documentation for verified cross-reference part numbers. Do not substitute with generic equivalents without verifying pin compatibility and electrical parameter alignment.