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The UPD48288118AFF-E24-DW1 is a 288M-bit Low Latency DRAM-II memory controller IC manufactured by Renesas Electronics Corporation. It features an 18-bit data width and operates at a maximum frequency of 400 MHz with a 1.5V I/O voltage. The device utilizes a separate I/O architecture and supports a burst length of two words. It is housed in a DW1 package, complies with RoHS3 standards, and has a Moisture Sensitivity Level (MSL) of 3.
Verify the specific suffix E24-DW1-A against your bill of materials, as suffixes often denote temperature ranges or packaging variations. Confirm RoHS3 compliance status if environmental regulations are critical. Check MSL level 3 handling requirements during storage and assembly to prevent moisture damage. Ensure the 1.5V I/O voltage matches your system's power supply specifications before procurement.
Select this component when a dedicated memory controller with low latency characteristics is required rather than standard DRAM. The 18-bit data width suits applications needing wider data paths without increasing pin count significantly. Consider the 400 MHz operating frequency for performance needs. Verify that the separate I/O architecture aligns with your PCB layout constraints and signal routing capabilities.
This part belongs to Renesas' Low Latency DRAM family, designed for specialized memory control tasks. It differs from standard DRAM chips by integrating controller logic. Similar parts in the series may vary in density or interface speed. The UPD48288118AFF-E24-DW1 specifically targets applications where deterministic latency is more critical than raw capacity.
Direct substitutes include the UPD48288218AF1-E24-DW1-A, which shares similar density and interface characteristics. Verify pin compatibility and electrical parameters before substitution. Cross-reference with other Low Latency DRAM-II variants from Renesas if functional equivalence is needed.