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The UPD48288236AFF-E18-DW1-A is a Low Latency DRAM-II integrated circuit manufactured by Renesas Electronics. It features a 288000 Kb density and a 36-bit data width architecture. The device supports a burst length of 2 words. Electrical specifications include a cycle time of 1.875 ns at tRC = 15 ns, and 2.5 ns at tRC = 15 ns. The component utilizes a double-data-rate architecture with PLL circuitry to achieve low latency performance in memory applications.
This component is restricted to customers who have already adopted these products. Verification of authorized distribution channels is required before procurement. Ensure that the specific suffix matches the required electrical and mechanical specifications from the official datasheet. Contact Renesas Electronics directly for eligibility confirmation and supply chain details.
Select this part when low latency and SRAM-like interface timing are critical for system performance. Verify that the 36-bit data width and 288000 Kb density align with the target memory map requirements. Confirm that the operating voltage and package type meet the board design constraints. Review the tRC parameters to ensure compatibility with the system clock speeds.
The UPD48288236AFF-E18-DW1-A belongs to the Low Latency DRAM family from Renesas. It is designed to bridge the performance gap between standard DRAM and faster SRAM solutions. This series is commonly used in applications where bandwidth and latency are balanced priorities. The E18 suffix typically denotes specific speed grades or temperature ranges within the product line.
No public confirmed substitute part numbers are available in the provided documentation. Consult Renesas technical support for equivalent components with compatible pinouts and electrical characteristics.