UPD48576118FF-E24-DW1-E2

Overview

The UPD48576118FF-E24-DW1-E2 is a Low Latency DRAM manufactured by Renesas Electronics Corporation. It features a memory organization of 32M x 18 bits, providing a total capacity of 576 megabits. The component operates with a typical access time of 0.2 nanoseconds. This device utilizes separate I/O architecture to minimize latency compared to standard commodity DRAM solutions.

Feature Summary

• Provides extremely high performance relative to commodity DRAM through low data latency
• Features fast random access time capabilities for efficient data retrieval
• Utilizes separate I/O design to optimize signal integrity and speed

Applications

• High-performance computing systems requiring rapid data access
• Network infrastructure equipment demanding low latency memory
• Telecommunications hardware utilizing DDR DRAM interfaces

Procurement Notes

Verify the specific suffix E2 against official Renesas documentation to confirm package type and material compliance. Ensure compatibility with existing system memory controllers before procurement. Confirm that the separate I/O configuration matches the target PCB layout requirements.

Selection Notes

Select this component when system architecture requires lower latency than standard commodity DRAM allows. The 32M x 18 organization suits applications needing wide data paths with fast access times. Evaluate thermal and power constraints associated with DDR DRAM operation in the final design.

Part Context

This part belongs to Renesas' Low Latency DRAM family, designed to bridge the performance gap between standard memory and specialized cache solutions. The UPD series typically targets embedded and industrial applications where deterministic timing is critical for system stability and throughput.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify electrical pinouts and timing parameters if considering alternative vendors or newer revisions from Renesas.