SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UPD48576218F1-E18-DW1-E2-A is a Low Latency DRAM-II component manufactured by Renesas Electronics Corporation. It features a memory organization of 32M x 18, providing a total density of 576,000 Kb. The device supports a maximum frequency of 533 MHz with a data width of 18 bits. It utilizes an HSTL memory interface and operates at an I/O voltage of 1.5 V. The architecture incorporates double-data-rate capabilities and includes integrated PLL circuitry for clock management.
Verify the complete part number including suffixes to ensure correct speed grade and package configuration. Confirm RoHS compliance status through official documentation. Request the latest datasheet from Renesas Electronics to validate electrical characteristics and pin assignments before procurement.
Select this component when low latency and high bandwidth are critical for system performance. Ensure the design supports the required 1.5 V I/O voltage level. Verify that the host controller is compatible with the HSTL interface standard and can handle the specified burst length and memory organization constraints.
This part belongs to the UPD48576218 series of Low Latency DRAM-II devices. It is designed to bridge the performance gap between traditional DRAM and SRAM in demanding applications. The series offers various speed grades and configurations to suit different system requirements while maintaining compatibility with standard memory interfaces.
Check for equivalent parts within the UPD48576218 family with matching speed grades. Verify pin-to-pin compatibility if substituting with other variants. Ensure the replacement maintains the same density and interface standards.