UPD5756T6N-E2-A

Overview

The UPD5756T6N-E2-A is a SiGe BiCMOS integrated circuit wide band Low Noise Amplifier (LNA) IC with through function. It operates within a frequency range of 40MHz to 1GHz. The device provides a gain of 13dB and maintains a noise figure of 3.2dB. It features a P1dB output power of 10dBm and requires a supply voltage of 3.1V. The component is housed in a 6-TSON package.

Feature Summary

• Utilizes SiGe BiCMOS technology for high-performance amplification
• Designed as a wide band LNA IC with integrated through function

Applications

• RF amplifier circuits
• Wireless communication systems
• Broadband signal processing

Procurement Notes

Verify the specific ordering suffix, such as -E2-A, against official Renesas documentation to confirm exact specifications and compliance status. Ensure that the RoHS3 compliant status aligns with project requirements. Confirm the obsolete lifecycle status if sourcing new units, as availability may be limited or restricted to existing stock from authorized distributors.

Selection Notes

Select this component when a wide band LNA with SiGe BiCMOS technology is required for frequencies between 40MHz and 1GHz. Consider the 13dB gain and 3.2dB noise figure for sensitive RF front-end applications. The 6-TSON package size should fit the available PCB space constraints for the target design.

Part Context

This part belongs to the Renesas Electronics Corporation RF amplifier family. It is specifically identified as an integrated circuit utilizing Silicon Germanium Bipolar CMOS technology. The model number includes specific suffixes indicating package type and compliance variations within the broader product line.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete lifecycle status, direct replacements may require evaluating alternative wide band LNAs with similar SiGe BiCMOS characteristics and frequency ranges.