UPDS5100H

Single Diodes Overview

The UPDS5100H is a 5 Amp, 100 Volt high voltage Schottky barrier rectifier manufactured by Microsemi. It utilizes the PowerDI™5 surface mount package to deliver low forward voltage and minimal leakage current. Key electrical parameters include a maximum average rectified output current of 5 Amps, a peak repetitive reverse voltage of 100 V, and a non-repetitive peak forward surge current of 250A. The device features a thermal resistance junction-to-case of 2.0°C/W and operates within a junction temperature range of -65°C to +150°C.

Single Diodes Feature Summary

• Guard ring die construction provides transient protection capabilities.
• Silicon Schottky technology ensures minimal reverse recovery time and eliminates reverse-recovery oscillations.
• Full-metallic bottom design prevents flux entrapment during assembly.
• Low inductive parasitics minimize Ldi/dt effects for high-frequency switching applications.

Single Diodes Applications

• High-frequency switching power supplies
• Inverter circuits
• Free wheeling diode configurations
• Polarity protection applications

Single Diodes Procurement Notes

Verify component authenticity through authorized Microsemi channels or certified distributors. Confirm RoHS compliance status and lead-free finish specifications against current regulatory requirements. Ensure storage conditions adhere to moisture sensitivity level 1 standards per J-STD-020C. Validate marking codes (S5100H) and date codes for traceability purposes prior to integration into production lines.

Single Diodes Selection Notes

Select this component when low forward voltage drop and fast switching speeds are critical for system efficiency. The PowerDI™5 package offers robust pick-and-place handling suitable for automated manufacturing processes. Consider the 2.0°C/W thermal resistance for thermal management designs requiring cooler operating junction temperatures compared to traditional packages.

Single Diodes Part Context

This device belongs to the Microsemi Scottsdale Division portfolio of high-voltage Schottky rectifiers. It is designed as a silicon hot-carrier rectifier intended to replace conventional ultrafast rectifiers in applications demanding very fast switching characteristics. The product emphasizes low power loss and high efficiency through its specific semiconductor construction and packaging technology.

Single Diodes Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.

Single Diodes FAQ

What is the maximum non-repetitive peak forward surge current?

The maximum non-repetitive peak forward surge current is 250A for an 8.3 ms single half sine-wave superimposed on rated load.

How does the device handle reverse recovery?

As a silicon Schottky rectifier, it exhibits minimal reverse recovery time (trr) and eliminates reverse-recovery oscillations, reducing the need for EMI filtering.