UPG2255T6N-E2-A

Overview

The UPG2255T6N-E2-A is a GaAs HJ-FET integrated circuit RF amplifier manufactured by Renesas Electronics Corporation. It operates within a frequency range of 1.88GHz to 1.93GHz and provides a gain of 60dB. The device supports a supply voltage of 1.5V to 3.5V with a supply current of 200mA. It features a P1dB output power of 25dBm and is housed in a compact 6-TSON (1.5x1.5) surface-mount package.

Feature Summary

• Utilizes GaAs HJ-FET technology for high-frequency performance
• Integrated general-purpose RF amplifier design
• Compact 6-TSON surface-mount packaging

Applications

• General purpose RF signal amplification
• Wireless communication systems operating in the 1.88-1.93 GHz band

Procurement Notes

Verify component authenticity through official Renesas channels or authorized distributors. Confirm that the received part matches the G5W marking and 6-TSON package specifications. Ensure handling procedures comply with electrostatic discharge protocols for GaAs devices. Cross-reference datasheet revisions to confirm technical parameters align with system requirements before integration.

Selection Notes

Select this component for applications requiring high gain in a small form factor within the specified frequency range. Consider the 1.5V to 3.5V supply voltage compatibility with existing power rails. Evaluate the 200mA supply current against available power budget constraints. Verify that the 6-TSON package dimensions fit the printed circuit board layout.

Part Context

This part belongs to the Renesas Electronics RF amplifier family, specifically designed for general-purpose radio frequency applications. It represents a solution utilizing GaAs HJ-FET technology to achieve high performance in a miniature footprint suitable for modern portable electronic devices.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.