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Product Detailed Parameters
- Description：TRANS 2PNP DUAL 30V 1A UMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：1A
- Voltage - Collector Emitter Breakdown (Max)：30V
- Vce Saturation (Max) @ Ib, Ic：350mV @ 25mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：270 @ 100mA, 2V
- Power - Max：400mW
- Frequency - Transition：320MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：UMT6
- Grade：-
- Qualification：-
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Overview
The US6T9TR is a dual PNP bipolar junction transistor manufactured by ROHM Semiconductor. It utilizes silicon technology and is housed in an SOT-363T-6 surface-mount package. The device features a collector-emitter voltage (VCEO) of 30 V, a collector-base voltage (VCBO) of 30 V, and an emitter-base voltage (VEBO) of 6 V. It supports a continuous collector current of -1 A with a power dissipation rating of 400 mW. Key electrical characteristics include a saturation voltage of 350 mV, a gain-bandwidth product (fT) of 320 MHz, and a DC current gain (hFE) ranging from 270 to 680 at -100 mA and -2 V. The maximum operating temperature reaches +150 C.
Feature Summary
- Dual PNP configuration within a compact SMD package
- High DC current gain for efficient switching applications
- Wide operating temperature range up to +150 C
Applications
- General-purpose switching circuits
- Low-power amplifier stages
- Digital logic interface buffers
Procurement Notes
Verify the specific ordering suffix against official ROHM documentation to ensure correct packaging format. Confirm RoHS compliance status through the manufacturer's latest datasheet or certification documents before finalizing procurement specifications.
Selection Notes
Select this component when a dual PNP configuration is required in a small footprint. Ensure the 30 V voltage rating and 1 A current capacity align with circuit requirements. Consider the 400 mW power dissipation limit and thermal management needs for the SOT-363T-6 package during design integration.
Part Context
This part belongs to the US6T9 series of dual bipolar transistors. It serves as a compact solution for applications requiring two matched PNP transistors in a single surface-mount package, offering space savings compared to discrete components.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official ROHM documentation for qualified alternatives if this component is obsolete or unavailable.
