US6X8TR

Overview

The US6X8TR is a dual NPN bipolar junction transistor (BJT) manufactured by ROHM Semiconductor. It features a SOT-363T surface-mount package with six terminals. The device supports a collector-emitter voltage (VCEO) of 30 V and a collector-base voltage (VCBO) of 30 V, with an emitter-base voltage (VEBO) rating of 6 V. Continuous collector current reaches 1 A, while power dissipation is rated at 400 mW. DC current gain (hFE) ranges from 270 to 680 at 100 mA and 2 V. The saturation voltage is 350 mV, and the transition frequency (fT) is 320 MHz. Maximum operating temperature is +150°C.

Feature Summary

• Dual NPN configuration in a compact SMD package
• High DC current gain for efficient switching
• Fast switching capability with 320 MHz transition frequency

Applications

• General-purpose switching circuits
• Low-power amplifier stages
• Digital logic interface buffers

Procurement Notes

Verify the exact ordering code matches the required suffix. Confirm RoHS compliance status through official documentation before procurement. Ensure packaging type aligns with assembly requirements. Check supply status as availability may vary by region.

Selection Notes

Select this component when a dual NPN BJT is required in a small footprint. Consider the 30 V voltage rating and 1 A current capacity for load requirements. Evaluate thermal management needs given the 400 mW power dissipation limit in the SOT-363T package.

Part Context

This part belongs to ROHM's discrete bipolar transistor lineup. It serves as a complement to other dual transistor variants in the US6X series. The SOT-363T package allows for space-constrained PCB layouts compared to larger through-hole alternatives.

Replacement Considerations

Check for direct pin-compatible substitutes within the same manufacturer family. Verify electrical parameters match or exceed original specifications. Confirm package dimensions are identical for mechanical fit.