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V20DM120HM3/I is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOT 120V 10A TO263AC. Review the specifications below when checking this part for your BOM.
The V20DM120HM3/I is a dual high-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features an SMPD (TO-263AC) package with a maximum repetitive peak reverse voltage of 120 V and an average forward rectified current of 20 A. The device exhibits ultra-low forward voltage characteristics, reaching 0.52 V at 5 A and 0.71 V at 20 A when the junction temperature is 125 °C. It supports a peak forward surge current of 150 A and operates within a junction and storage temperature range of -40 to +175 °C.
Verify that the specific ordering code includes the HM3 suffix to confirm AEC-Q101 qualification status. Ensure the component matches the SMPD package outline dimensions for proper PCB footprint compatibility. Confirm halogen-free compliance requirements align with project specifications before finalizing procurement orders.
Select this component for applications requiring low conduction losses and high thermal stability. The dual configuration allows for efficient use of board space in bridge or synchronous rectification topologies. Evaluate thermal resistance parameters against heatsinking capabilities to ensure reliable operation under continuous load conditions.
This part belongs to the eSMP series of high-performance rectifiers from Vishay. It represents an evolution in TMBS technology, offering superior switching characteristics compared to standard Schottky diodes. The dual structure provides two independent rectifying elements within a single surface-mount package.
V20DM120-M3/I
The typical height of the SMPD package is 1.7 mm.
Yes, the HM3 suffix indicates that the device is AEC-Q101 qualified.
The maximum DC forward rectified current is rated at 20 A.
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