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V62/04685-01XE is listed in the Inverter Gates range at ChipApex. The manufacturer field lists Texas Instruments. Its product description is IC GATE NAND 4CH 2-INP 14SOIC. Review the specifications below when checking this part for your BOM.
The V62/04685-01XE is an enhanced product SN74ALVC00 quadruple 2-input positive-NAND gate manufactured by Texas Instruments. It operates from a supply voltage range of 1.65 V to 3.6 V and features a maximum propagation delay of 3 ns at 3.3 V. The device provides ±24-mA output drive capability at 3.3 V and includes ESD protection exceeding 2000 V per MIL-STD-883, Method 3015. It is housed in a 14-pin SOIC (D) package and supports an operating temperature range of -40°C to 85°C.
Verify the specific ordering suffix and package type against current TI documentation before procurement. Confirm that the component meets all necessary environmental and qualification requirements for your application. Ensure compliance with export regulations if applicable. Check for any updated packaging or material specifications in the latest datasheet addendum.
Select this component when enhanced reliability and diminishing manufacturing sources support are required. It serves as a qualified alternative to standard catalog versions for critical applications. Consider the 1.65-V to 3.6-V operating range and 3-ns propagation delay for system timing constraints. Verify compatibility with existing PCB footprints and assembly processes.
This part is an enhanced version of the SN74ALVC00, designed for high-reliability applications. It shares the same logical function as the standard catalog part but offers additional qualification and manufacturing controls. It is suitable for environments where long-term availability and robust performance are critical.
Direct replacements include the standard catalog SN74ALVC00 for non-critical applications. Automotive-grade alternatives like SN74ALVC00-Q1 may be considered for automotive-specific requirements. Verify pinout and electrical characteristics match before substitution.
The device provides ESD protection that exceeds 2000 V per MIL-STD-883, Method 3015.
Yes, the latch-up performance exceeds 250 mA per JESD 17.
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