VB20120C-M3/4W

Diode Arrays Overview

The VB20120C-M3 is a dual high-voltage Trench MOS Barrier Schottky rectifier in a D2PAK (TO-263AB) package. It features a common cathode configuration with two independent diodes. Key electrical parameters include a maximum repetitive peak reverse voltage of 120 V and a total maximum average forward rectified current of 20 A, rated at 10 A per diode. The device exhibits an ultra-low forward voltage drop of 0.54 V at 5 A and 125 °C. Peak forward surge current is specified at 120 A, while the operating junction temperature range extends from -40 to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology for low forward voltage drop and reduced power losses
• High efficiency operation suitable for high-frequency applications
• Meets MSL level 1 requirements with a maximum peak reflow temperature of 245 °C
• Halogen-free and RoHS-compliant construction

Diode Arrays Applications

• High frequency converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• DC/DC converters
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm packaging details. The datasheet indicates that suffixes such as /4W correspond to tube packaging, while other variants may utilize tape and reel formats. Ensure the selected variant matches the required delivery mode and unit weight specifications for your assembly process.

Diode Arrays Selection Notes

Select this component for designs requiring a dual common cathode Schottky rectifier in a surface-mount D2PAK package. The device is appropriate for applications demanding low forward voltage characteristics and high thermal performance within a 120 V blocking voltage limit. Confirm that the thermal management strategy accommodates the specified thermal resistance values for the intended ambient conditions.

Diode Arrays Part Context

This component belongs to Vishay's TMBS product line, which integrates Trench MOS technology into Schottky rectifiers. The series is designed to offer superior switching performance and lower conduction losses compared to standard Schottky devices. The D2PAK form factor provides robust mechanical mounting and efficient heat dissipation capabilities for power electronics applications.

Diode Arrays Replacement Considerations

The datasheet lists the VB20120SC-M3/4W as a related part number within the same family, distinguished by its tube packaging format. Verify pinout compatibility and thermal characteristics when considering alternative packages or manufacturers.