VB20202G-M3/8W

Diode Arrays Overview

The VB20202G-M3/8W is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a TO-263AB (D2PAK) package with a common cathode configuration. The device supports a maximum repetitive peak reverse voltage of 200 V and a maximum average forward rectified current of 10 A per diode. Key electrical parameters include a peak forward surge current of 130 A, an instantaneous forward voltage of 0.76 V at 5 A and 25 °C, and a maximum reverse current of 150 μA at 200 V and 25 °C. The component operates within a junction temperature range of -40 to +175 °C.

Diode Arrays Feature Summary

• Utilizes Gen 2 Trench MOS Schottky technology for ultra-low forward voltage drop and reduced power losses.
• Designed for high efficiency operation in switching applications.
• Compliant with MSL level 1 standards and withstands a maximum solder bath temperature of 275 °C.
• Features matte tin plated leads that are solderable per J-STD-002 and JESD 22-B102.

Diode Arrays Applications

• High frequency DC/DC converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix to confirm the delivery mode and packaging quantity. The /8W suffix indicates tape and reel packaging with a base quantity of 800 units. Confirm compliance requirements such as RoHS and halogen-free status, which are standard for the M3 series. Ensure the procurement matches the required thermal resistance characteristics for the D2PAK package.

Diode Arrays Selection Notes

Select this component when a low forward voltage drop is critical for minimizing conduction losses in high-frequency environments. The 200 V rating makes it suitable for intermediate voltage bus applications. Consider the thermal management requirements based on the junction-to-case thermal resistance of 2.8 °C/W per diode. Verify that the operating environment stays within the specified -40 to +175 °C junction temperature range.

Diode Arrays Part Context

This part belongs to the V20202G family of dual TMBS rectifiers from Vishay. The 'VB' prefix specifically designates the D2PAK (TO-263AB) surface-mount package variant. Other family members include V20202G (TO-220AB), VF20202G (ITO-220AB), and VI20202G (TO-262AA). All variants share identical electrical characteristics but differ in mechanical mounting and thermal dissipation properties.

Diode Arrays Replacement Considerations

Direct pin-compatible replacements within the same Vishay family include V20202G-M3/4W, VF20202G-M3/4W, and VI20202G-M3/4W. These alternatives offer the same electrical specifications but utilize different packages or tube packaging. Cross-brand replacements require matching the 200 V reverse voltage, 10 A current rating, and common cathode configuration.

Diode Arrays FAQ

What is the maximum junction temperature for the VB20202G-M3/8W?

The maximum operating junction temperature is +175 °C.

Does the VB20202G-M3/8W meet lead-free requirements?

Yes, the M3 suffix indicates that the device is halogen-free, RoHS-compliant, and meets the JESD 201 class 1A whisker test.

What is the typical thermal resistance from junction to case?

The typical thermal resistance (RθJC) per diode is 2.8 °C/W.