VB40150C-E3/4W

Diode Arrays Overview

The VB40150C-E3/4W is a dual high voltage Trench MOS barrier Schottky rectifier in a D2PAK (TO-263AB) package. It features a common cathode configuration with a maximum repetitive peak reverse voltage of 150 V and an average forward rectified current of 20 A per diode. The device achieves ultra-low forward voltage characteristics, reaching 0.75 V at 20 A and 125 °C. It supports a peak forward surge current of 160 A and operates within a junction temperature range of -55 to +150 °C.

Diode Arrays Feature Summary

• Trench MOS Schottky technology for low forward voltage drop and reduced power losses
• High efficiency operation suitable for demanding power conversion applications
• RoHS-compliant commercial grade construction with matte tin plated leads

Diode Arrays Applications

• High frequency converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• DC/DC converters
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the delivery mode and packaging quantity. The /4W suffix indicates tube packaging, while other suffixes may denote tape and reel formats. Ensure that the component meets the required material categorization standards and complies with applicable JESD standards for solderability and whisker testing before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component when a dual Schottky rectifier with a 150 V rating and 20 A per-diode capacity is required in a surface-mount TO-263AB package. Consider the thermal resistance and derating curves for heat sink design. Validate the forward voltage drop at the expected operating current and temperature to ensure system efficiency targets are met. Confirm compatibility with the intended PCB footprint and mounting torque requirements.

Diode Arrays Part Context

This part belongs to the V40150C-E3 family of dual high voltage Trench MOS barrier Schottky rectifiers manufactured by Vishay General Semiconductor. The family includes variants in different packages such as TO-220AB, ITO-220AB, and TO-262AA. All variants share identical electrical characteristics but differ in mechanical form factor and thermal performance metrics.

Diode Arrays Replacement Considerations

Direct substitutes within the same family include VF40150C-E3/4W (ITO-220AB), V40150C-E3/4W (TO-220AB), and VI40150C-E3/4W (TO-262AA). Verify pinout compatibility and physical dimensions when substituting between package types.

Diode Arrays FAQ

What is the maximum junction temperature for the VB40150C-E3/4W?

The maximum operating junction temperature is +150 °C.

Does the VB40150C-E3/4W meet RoHS standards?

Yes, the base part number is RoHS-compliant and classified as commercial grade.

What is the typical forward voltage drop at rated conditions?

The forward voltage is 0.75 V at an forward current of 20 A and a junction temperature of 125 °C.