VBT1060C-E3/4W

Diode Arrays Overview

The VBT1060C-E3/4W is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a TO-220AB package with a common cathode configuration containing two independent diodes. The device supports a maximum repetitive peak reverse voltage of 60 V and a total maximum average forward rectified current of 10 A, rated at 5 A per diode. It exhibits an ultra-low forward voltage drop of 0.39 V at 2.5 A and 0.50 V at 5.0 A. The component withstands a peak forward surge current of 100 A and operates within a junction temperature range of -55 °C to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve low forward voltage drop and reduced power losses.
• Provides high efficiency operation suitable for demanding power conversion applications.
• Features matte tin plated leads that are solderable per J-STD-002 and JESD 22-B102 standards.

Diode Arrays Applications

• High frequency converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• DC/DC converters
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm the package type and delivery mode. The base part number covers multiple packages including TO-220AB, ITO-220AB, D2PAK, and TO-262AA. Ensure the selected variant matches the required thermal resistance and mounting specifications for the target application design.

Diode Arrays Selection Notes

Select this component when low forward voltage drop is critical for minimizing conduction losses in high-frequency switching environments. The TMBS technology offers superior performance compared to standard silicon rectifiers. Consider the thermal resistance characteristics and the 150 °C maximum junction temperature rating when designing the heatsinking requirements for continuous operation.

Diode Arrays Part Context

This component belongs to the VT1060C family of dual high voltage Trench MOS Barrier Schottky rectifiers from Vishay. The family includes variants such as VT1060C, VFT1060C, and VIT1060C, which share identical electrical characteristics but differ in physical package configurations like TO-220AB, ITO-220AB, and TO-262AA. All variants utilize the same underlying semiconductor technology.

Diode Arrays Replacement Considerations

Direct substitutes include other Vishay dual Schottky rectifiers with matching 60 V ratings and similar current capabilities, such as the VT2060C series. Verify pinout compatibility and thermal resistance values before substituting to ensure proper circuit integration.

Diode Arrays FAQ

What is the typical thermal resistance per diode for the VBT1060C?

The typical thermal resistance per diode (RθJC) for the VBT1060C is 2.5 °C/W.

Does the VBT1060C meet moisture sensitivity level requirements?

Yes, the device meets MSL level 1 per J-STD-020, with a maximum peak reflow temperature of 245 °C for the D2PAK package.

What is the maximum non-repetitive avalanche energy rating?

The non-repetitive avalanche energy (EAS) is rated at 65 mJ at a junction temperature of 25 °C with an inductance of 60 mH.