VBT1060C-E3/8W

Diode Arrays Overview

The VBT1060C-E3/8W is a dual high voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor - Diodes Division. It utilizes TMBS technology to achieve ultra-low forward voltage drop, specified as 0.39 V at IF = 2.5 A and 0.50 V at IF = 5.0 A. The device features a common cathode configuration with two diodes housed in a D2PAK (TO-263AB) surface-mount package. Key electrical ratings include a maximum repetitive peak reverse voltage (VRRM) of 60 V, a maximum average forward rectified current (IF(AV)) of 5 A per diode, and a peak forward surge current (IFSM) of 100 A. The operating junction temperature range extends from -55 °C to +150 °C.

Diode Arrays Feature Summary

• Trench MOS Schottky technology for low forward voltage drop and power losses
• High efficiency operation suitable for high frequency applications
• RoHS-compliant commercial grade with matte tin plated leads

Diode Arrays Applications

• High frequency converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• DC/DC converters
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the delivery mode and packaging quantity. The E3 suffix indicates compliance with JESD 201 class 1A whisker testing standards. Confirm that the required thermal resistance characteristics align with the D2PAK (TO-263AB) package specifications provided in the datasheet before finalizing procurement.

Diode Arrays Selection Notes

Select this component when a dual common cathode Schottky rectifier is required for high-frequency switching applications. The D2PAK (TO-263AB) package provides a compact surface-mount solution with adequate thermal dissipation capabilities. Ensure the circuit design accommodates the 60 V reverse voltage rating and the 5 A average forward current per diode limit under the expected ambient temperature conditions.

Diode Arrays Part Context

This part belongs to the VT1060C family of dual high voltage Trench MOS Barrier Schottky Rectifiers. The family includes variants such as VT1060C, VFT1060C, and VIT1060C, which differ primarily in their physical package types like TO-220AB, ITO-220AB, and TO-262AA. All variants share identical electrical characteristics and core TMBS technology, offering flexibility in mounting styles while maintaining consistent performance metrics.

Diode Arrays Replacement Considerations

Direct replacements within the same family include VT1060C-E3/4W, VFT1060C-E3/4W, and VIT1060C-E3/4W, provided the package form factor matches the board layout requirements. Verify that any substitute maintains the D2PAK (TO-263AB) footprint if space constraints are critical.

Diode Arrays FAQ

What is the typical thermal resistance per diode for the VBT1060C?

The typical thermal resistance per diode (RθJC) for the VBT1060C is 3.5 °C/W.

Does the VBT1060C meet moisture sensitivity level 1?

Yes, the device meets MSL level 1 per J-STD-020, with a LF maximum peak soldering temperature of 245 °C for the D2PAK (TO-263AB) package.

What is the maximum non-repetitive avalanche energy rating?

The non-repetitive avalanche energy (EAS) is rated at 65 mJ at TJ = 25 °C with an inductance of 60 mH.