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VBT6045C-E3/4W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 45V 30A TO263AB. Review the specifications below when checking this part for your BOM.
The VBT6045C-E3/4W is a dual low-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration in a D2PAK (TO-263AB) package. The device provides a maximum repetitive peak reverse voltage of 45 V and a total maximum average forward rectified current of 60 A, with 30 A per diode. It supports a peak forward surge current of 320 A for an 8.3 ms single half-sine-wave pulse. The component operates within a junction and storage temperature range of -40 to +150 °C.
Verify the specific ordering suffix against official documentation to confirm packaging details. The base part number indicates RoHS compliance and commercial grade material categorization. Confirm that the E3 suffix meets JESD 201 class 1A whisker test requirements as specified in the datasheet. Ensure thermal management aligns with the provided derating curves for the intended operating environment.
Select this component for applications requiring low forward voltage at high currents to minimize conduction losses. The TMBS technology offers superior performance compared to standard Schottky barriers. Evaluate thermal resistance characteristics relative to the heatsink design. Verify that the 45 V reverse voltage rating accommodates peak transient voltages in the target circuit without exceeding limits.
This device belongs to the VBT6045C series of dual low-voltage Trench MOS Barrier Schottky Rectifiers from Vishay. The series is engineered for high-frequency power conversion tasks where efficiency and thermal performance are critical. The D2PAK package facilitates surface-mount assembly while providing robust mechanical stability for industrial and consumer electronics applications.
VBT6045C-M3 serves as a verified alternative within the same product family.
The typical instantaneous forward voltage is 0.44 V at 10 A and 25 °C.
The device utilizes a common cathode circuit configuration with two independent diodes sharing a common cathode terminal.
The maximum operating junction temperature is 150 °C.
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