Diode Arrays VBT6045C-E3/4W product image

VBT6045C-E3/4W

$1.13
  • Description:DIODE ARR SCHOTT 45V 30A TO263AB
  • Series:TMBS®

SKU:b60eefcca010 Category: Brand:

  
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VBT6045C-E3/4W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 45V 30A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for VBT6045C-E3/4W

  • Description:DIODE ARR SCHOTT 45V 30A TO263AB
  • Series:TMBS®
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):45 V
  • Current - Average Rectified (Io) (per Diode):30A
  • Voltage - Forward (Vf) (Max) @ If:640 mV @ 30 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Current - Reverse Leakage @ Vr:3 mA @ 45 V
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB (D2PAK)
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for VBT6045C-E3/4W

VBT6045C-E3/4W

Diode Arrays Overview

The VBT6045C-E3/4W is a dual low-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration in a D2PAK (TO-263AB) package. The device provides a maximum repetitive peak reverse voltage of 45 V and a total maximum average forward rectified current of 60 A, with 30 A per diode. It supports a peak forward surge current of 320 A for an 8.3 ms single half-sine-wave pulse. The component operates within a junction and storage temperature range of -40 to +150 °C.

Diode Arrays Feature Summary

  • Utilizes Trench MOS Schottky technology to achieve ultra-low forward voltage drop and reduced power losses.
  • Designed for high efficiency operation in switching applications.
  • Complies with MSL level 1 standards per J-STD-020 with a lead-free maximum peak temperature of 245 °C.

Diode Arrays Applications

  • High frequency DC/DC converters
  • Switching power supplies
  • Freewheeling diodes
  • OR-ing diode circuits
  • Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The base part number indicates RoHS compliance and commercial grade material categorization. Confirm that the E3 suffix meets JESD 201 class 1A whisker test requirements as specified in the datasheet. Ensure thermal management aligns with the provided derating curves for the intended operating environment.

Diode Arrays Selection Notes

Select this component for applications requiring low forward voltage at high currents to minimize conduction losses. The TMBS technology offers superior performance compared to standard Schottky barriers. Evaluate thermal resistance characteristics relative to the heatsink design. Verify that the 45 V reverse voltage rating accommodates peak transient voltages in the target circuit without exceeding limits.

Diode Arrays Part Context

This device belongs to the VBT6045C series of dual low-voltage Trench MOS Barrier Schottky Rectifiers from Vishay. The series is engineered for high-frequency power conversion tasks where efficiency and thermal performance are critical. The D2PAK package facilitates surface-mount assembly while providing robust mechanical stability for industrial and consumer electronics applications.

Diode Arrays Replacement Considerations

VBT6045C-M3 serves as a verified alternative within the same product family.

Diode Arrays FAQ

What is the typical instantaneous forward voltage at 10 A?

The typical instantaneous forward voltage is 0.44 V at 10 A and 25 °C.

How is the device configured internally?

The device utilizes a common cathode circuit configuration with two independent diodes sharing a common cathode terminal.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150 °C.

VBT6045C-E3/4WVBT6045C-E3/4W
$1.13
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