VI30100CHM3/4W

Diode Arrays Overview

The VI30100CHM3/4W is a dual high-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration within a TO-262AA package. The device supports a maximum repetitive peak reverse voltage of 100 V and an average forward rectified current of 30 A per device, or 15 A per diode. Peak forward surge current reaches 160 A. Forward voltage drop is specified at 0.734 V typically and 0.80 V maximum at 15 A. Operating junction temperature ranges from -40 °C to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology for low forward voltage drop and reduced power losses.
• Provides high efficiency operation with low thermal resistance.
• Features matte tin plated leads that are solderable per J-STD-002 and JESD 22-B102 standards.

Diode Arrays Applications

• High frequency DC/DC converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm availability through authorized distributors as supply levels fluctuate. Ensure the component meets RoHS directives and halogen-free requirements if mandated by project specifications. Validate technical parameters against the latest datasheet revision before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component for applications requiring high-efficiency rectification in switching power supplies. The TMBS technology offers superior performance compared to standard silicon rectifiers. Consider the thermal characteristics and package constraints when designing heat dissipation solutions. Verify that the 100 V reverse voltage rating aligns with the circuit's peak inverse voltage requirements.

Diode Arrays Part Context

This part belongs to the V30100C and VI30100C series of dual high-voltage Trench MOS Barrier Schottky Rectifiers. The VI prefix indicates the TO-262AA surface-mount package variant, while the V30100C denotes the TO-220AB through-hole version. Both share identical electrical characteristics and are designed for high-frequency applications.

Diode Arrays Replacement Considerations

The V30100C-M3/4W serves as a direct functional equivalent utilizing the TO-220AB through-hole package instead of the TO-262AA surface-mount format. Electrical ratings remain identical between the two variants.

Diode Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150 °C.

How is the internal diode configuration arranged?

The device utilizes a common cathode configuration with two independent diodes.

What is the typical forward voltage drop at rated current?

The typical forward voltage drop is 0.734 V at an forward current of 15 A.