VIT1080C-E3/4W

Diode Arrays Overview

The VIT1080C-E3/4W is a dual Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration with two independent diodes housed in a TO-262AA (ITO-220AB) package. The device supports a maximum repetitive peak reverse voltage of 80 V and provides a total maximum average forward rectified current of 10 A, rated at 5 A per diode. Peak forward surge current capability is specified at 80 A per diode under standard half-sine wave conditions. The component operates within a junction temperature range of -55 °C to +150 °C.

Diode Arrays Feature Summary

• Utilizes Trench MOS Schottky technology to achieve ultra-low forward voltage drop and reduced power losses.
• Designed for high efficiency operation in switching applications.
• Features matte tin plated leads that are solderable per J-STD-002 standards.
• Molding compound meets UL 94 V-0 flammability rating.

Diode Arrays Applications

• High frequency converters
• Switching power supplies
• Freewheeling diodes
• OR-ing diode circuits
• DC/DC converters
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific suffix /4W indicates tube packaging containing 50 units per tube as documented in the ordering information table. Confirm compliance with RoHS directives and material categorization requirements before procurement. Ensure thermal management aligns with the specified junction-to-case thermal resistance values provided in the datasheet.

Diode Arrays Selection Notes

Select this component when a low forward voltage drop is critical for system efficiency. The TO-262AA package offers distinct mounting characteristics compared to standard TO-220 variants. Verify that the 80 V reverse voltage rating accommodates peak line transients in the target application circuit design.

Diode Arrays Part Context

This part belongs to the V(B,I)T1080C family of dual TMBS rectifiers from Vishay. Variants include VT1080C for TO-220AB, VFT1080C for ITO-220AB, and VBT1080C for D2PAK packages. All share identical electrical characteristics but differ in physical footprint and thermal dissipation properties based on their respective lead frame constructions.

Diode Arrays Replacement Considerations

Direct substitutes within the same electrical specification and package type include VT1080C-E3/4W, VFT1080C-E3/4W, and VBT1080C-E3/4W. Cross-package replacements require verification of mechanical fit and thermal performance constraints.

Diode Arrays FAQ

What is the typical instantaneous forward voltage at 3 A?

The typical instantaneous forward voltage is 0.54 V at an forward current of 3 A and a junction temperature of 25 °C.

Does the component meet moisture sensitivity level requirements?

Yes, the product meets MSL level 1 per J-STD-020, with a maximum peak reflow temperature of 245 °C for the D2PAK package.

What is the isolation voltage for the ITO-220AB package?

For the ITO-220AB package variant, the isolation voltage from terminal to heatsink is 1500 VAC for a duration of 1 minute.