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The VN5770AKTR-E is a smart power device from STMicroelectronics' VIPower and OMNIFET II families, housed in a 28-SO package. It integrates two half-bridge drivers with four high-side and two low-side switches for complete H-bridge configurations. The component supports a supply voltage range of 4.5V to 36V and delivers an output current of 8.5A per channel. It features a typical on-resistance of 160 milliohms and operates within a junction temperature range of -40°C to 150°C.
Verify the specific suffix 'E' against the official datasheet to confirm compliance with RoHS3 standards and environmental requirements. Confirm that the 28-SO package dimensions match the target PCB footprint. Check the lifecycle status, as this part may be marked as Not Recommended for New Designs (NRND). Ensure the logic interface compatibility aligns with the system's control signals before finalizing procurement.
Select this component when designing circuits requiring integrated H-bridge capabilities with high current handling. The 160 milliohm on-resistance offers efficiency benefits for power management. Consider the 28-SO package size for space-constrained designs. Verify that the 36V maximum supply voltage meets the system's electrical requirements. Evaluate the thermal performance given the 150°C junction temperature limit for high-load scenarios.
This device belongs to the VN5770 series, which utilizes Power MOSFET technology. It is part of the broader VIPower family designed for automotive and industrial applications. The integration of three monolithic chips into a single SO-28 package simplifies the design process for complex bridge configurations compared to discrete solutions.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer's official replacement guide or contact technical support for verified alternatives.