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VNS3NV04DPTR-E is listed in the Power Distribution Switches, Load Drivers range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is IC PWR DRIVER N-CHANNEL 1:1 8SO. Review the specifications below when checking this part for your BOM.
The VNS3NV04DPTR-E is a dual-channel low-side power switch from the OMNIFET II VIPower family, manufactured using STMicroelectronics' M0-3 technology. It features two N-channel MOSFET outputs with a maximum load voltage of 36V and a continuous output current of 3.5A per channel. The device operates within a junction temperature range of -40°C to +150°C and is housed in an 8-SOIC package. Key electrical parameters include a typical on-resistance of 120mΩ, rise time of 250ns, and fall time of 250ns.
Verify the specific suffix 'E' indicates RoHS compliance and halogen-free status as per manufacturer standards. Confirm the SOIC-8 package dimensions match PCB footprint requirements. Ensure ESD handling protocols are followed due to moisture sensitivity level 3 classification. Cross-reference the AEC-Q100 qualification if automotive reliability is required.
Select this component when dual-channel low-side switching with integrated diagnostics is required. It serves as a direct replacement for standard discrete MOSFETs in applications up to 50 kHz. Consider the 120mΩ on-resistance for power dissipation calculations. The analog gate access allows for potential linear driving modes if supported by the control interface.
This part belongs to the OMNIFET II series, designed to replace standard power MOSFETs with enhanced protection features. It utilizes VIPower M0-3 technology for high integration and reliability. The dual-channel configuration allows for compact designs in applications requiring independent control of two loads within a single package.
The VNS3NV04DP-E is the leaded equivalent of the VNS3NV04DPTR-E. Verify pinout compatibility before substitution.
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