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VO216AT is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists Vishay Semiconductor Opto Division. Its product description is OPTOISO 4KV TRANS W/BASE 8-SOIC. Review the specifications below when checking this part for your BOM.
The VO216AT is a single-channel optoisolator featuring an NPN phototransistor with a base terminal, housed in an 8-SOIC package. It provides 4000Vrms isolation voltage and supports a maximum collector current of 50mA. The device exhibits a typical rise/fall time of 3μs and a maximum collector-emitter saturation voltage of 400mV. Current transfer ratio ranges from 50% to 80% at 1mA forward current. Operating temperature spans -55°C to +110°C.
Verify the specific suffix 'AT' corresponds to the tape-and-reel packaging configuration required for automated assembly processes. Confirm that the 8-SOIC footprint matches the target PCB design constraints. Ensure compliance with RoHS directives if applicable to the end product regulations. Cross-reference the datasheet revision date to guarantee parameter accuracy against current production batches.
Select this component when base-controlled switching speed is critical for signal integrity. The 8-SOIC package offers space efficiency compared to traditional DIP options. Consider the 4000Vrms isolation level against system safety requirements. Evaluate the 50mA output capability against load drive needs. The wide temperature range supports operation in harsh environmental conditions without derating.
The VO216AT belongs to Vishay's VO21x series of high-speed optocouplers. It shares architectural similarities with the VO215AT and VO217AT, differing primarily in current transfer ratio specifications. This series utilizes a Gallium Arsenide infrared LED coupled with a silicon NPN phototransistor. The family is designed for applications requiring fast response times and reliable electrical isolation in compact surface-mount packages.
The base terminal allows for external control of the phototransistor's switching speed and sensitivity, enabling faster turn-off times and reduced storage delay compared to standard phototransistors.
The device features a typical rise time and fall time of 3 microseconds each, providing balanced switching performance for digital signal isolation.
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