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VS-10TTS08S-M3 is listed in the Scrs range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is SCR 800V 10A D2PAK. Review the specifications below when checking this part for your BOM.
The VS-10TTS08S-M3 is a high voltage surface mount phase control silicon controlled rectifier (SCR) from Vishay Semiconductors. It features an average on-state current of 6.5 A and a maximum repetitive peak reverse voltage of 800 V. The device utilizes glass passivation technology for reliable operation up to a junction temperature of 125 °C. Packaged in a D2PAK (TO-263AB) outline, it offers low thermal resistance and meets MSL level 1 requirements.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type. Standard tubes contain 50 units, while tape and reel options are available in quantities of 800. Ensure the selected variant matches the required orientation and reel diameter specifications for automated assembly processes.
Select this component based on the 800 V blocking capability and 6.5 A average current rating. Consider the D2PAK footprint for PCB layout constraints. Evaluate thermal management requirements using the provided derating curves and thermal impedance data to ensure the junction temperature remains within the specified operating range under expected load conditions.
This part belongs to the VS-10TTS08S-M3 series of high voltage SCRs. It is manufactured by Vishay Semiconductors and is designed for robust performance in demanding electronic environments. The series includes variants with different packaging options to suit various manufacturing needs.
Consult the manufacturer's datasheet for direct cross-reference information. Verify that any substitute component matches the 800 V rating, 6.5 A current capacity, and D2PAK package dimensions to ensure mechanical and electrical compatibility.
The maximum non-repetitive surge current is 110 A for a 10 ms sine pulse with no voltage reapplied at a junction temperature of 125 °C.
The typical turn-off time (tq) is 100 microseconds when tested at a junction temperature of 125 °C.
The maximum required DC gate current to trigger decreases as temperature increases, ranging from 20 mA at -65 °C to 10 mA at 125 °C.
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