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VS-16TTS12STRLPBF is listed in the Scrs range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is SCR 1.2KV 16A TO263AB. Review the specifications below when checking this part for your BOM.
The VS-16TTS12STRLPBF is a high voltage, surface mountable phase control silicon controlled rectifier (SCR) from Vishay Semiconductors. It features a TO-263AB (D2PAK) package and supports a maximum average on-state current of 10 A with an RMS rating of 16 A. The device offers a peak reverse repetitive voltage (VRRM) of 1200 V and a maximum peak direct voltage (VDRM) of 1200 V. Key electrical characteristics include a typical on-state voltage drop (VTM) of 1.4 V at 10 A, a gate trigger current (IGT) of 60 mA, and a junction temperature range of -40 °C to 125 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the packaging format. The 'TRL' suffix indicates a tape and reel configuration with left orientation, while other suffixes may denote tube packaging or different orientations. Ensure the component matches the required voltage rating code, where '12' corresponds to 1200 V. Confirm lead-free status and RoHS compliance through the datasheet revision history.
Select this component based on the required blocking voltage and thermal management constraints. The 1200 V rating suits high-voltage AC line applications. Evaluate the thermal resistance from junction to case (1.3 °C/W) and ambient conditions to determine appropriate heatsinking. Consider the gate trigger requirements and dI/dt ratings for driver circuit compatibility. Verify that the operating junction temperature remains within the specified -40 °C to 125 °C range under all load conditions.
This part belongs to the VS-16TTS..SPbF series of high voltage SCRs manufactured by Vishay Semiconductors. The series includes variants with different voltage ratings, such as 800 V and 1200 V options. These devices are engineered for robust performance in industrial environments, utilizing advanced silicon processing to ensure reliable operation up to 125 °C junction temperature.
Public confirmed substitute part numbers: None identified in verified source material.
The maximum peak, one-cycle, non-repetitive surge current (ITSM) is 200 A when no voltage is reapplied, and 170 A when rated VRRM is applied following the surge.
The maximum required DC gate current to trigger (IGT) decreases as temperature increases: it is 90 mA at -10 °C, 60 mA at 25 °C, and 35 mA at 125 °C.
The typical turn-off time (tq) is 110 µs at a junction temperature of 125 °C.
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