SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
VS-1N1183A is listed in the Single Diodes range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE STANDARD 50V 40A DO203AB. Review the specifications below when checking this part for your BOM.
The VS-1N1183A is a silicon power rectifier diode from Vishay Semiconductors, rated for a maximum average forward current of 40 A and a maximum repetitive peak reverse voltage of 50 V. It utilizes the DO-203AB (DO-5) stud-mount package with an approximate weight of 17 g. The device supports a junction temperature range of -65 °C to +200 °C and features low leakage current characteristics alongside high surge current capability.
Verify that the specific part number matches the required electrical ratings, particularly the 40 A forward current and 50 V reverse voltage specifications. Confirm compliance with RoHS directives and material categorization standards as defined in Vishay documentation. Ensure mounting torque limits are observed during installation to maintain thermal performance and mechanical integrity.
Select this component when a single-phase silicon rectifier with a 40 A average forward current rating is required. The 50 V maximum repetitive peak reverse voltage defines its blocking capability. Consider the DO-203AB stud-mount package for heatsink integration. Verify that the operating case temperature range of -65 °C to +190 °C aligns with the application environment.
The VS-1N1183A belongs to the VS-1N1183, VS-1N3765, VS-1N1183A, and VS-1N2128A series of power silicon rectifier diodes manufactured by Vishay Semiconductors. These devices share common packaging and feature sets but differ in current and voltage ratings. The series is designed for high-power applications requiring robust surge handling and low leakage.
VS-1N1183
Explore related parts through Rectifiers, Diodes, Discrete Semiconductor Products, all product categories.