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VS-20WT04FNTR is listed in the Single Diodes range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE SCHOTTKY 45V 20A TO252AA. Review the specifications below when checking this part for your BOM.
The VS-20WT04FNTR is a high-performance Schottky rectifier manufactured by Vishay Semiconductors, utilizing submicron trench technology. It features a single die configuration housed in a D-PAK (TO-252AA) package with tape and reel orientation suffix TRR. The device supports a maximum average forward current of 20 A and a maximum DC reverse voltage of 45 V. Key electrical characteristics include a typical forward voltage drop of 0.53 V at 20 A and a maximum reverse leakage current of 7 mA at 125 °C. It operates within a junction temperature range of -55 to 175 °C and offers increased ruggedness for reverse avalanche capability.
Verify the specific ordering suffix 'TRR' corresponds to right-oriented tape and reel packaging as defined in the manufacturer's documentation. Confirm that the component meets RoHS Directive 2011/65/EU requirements if environmental compliance is required. Ensure thermal management design accounts for the specified thermal resistance values under actual operating conditions.
Select this component when high efficiency and low forward voltage are critical for power density systems. The D-PAK package is suitable for surface mount applications requiring robust thermal performance. Consider the 45 V rating and 20 A current capacity against peak load requirements. Verify compatibility with high-frequency switching environments due to negligible switching losses.
This part belongs to the High Performance Schottky Generation 5 series from Vishay Semiconductors. It shares technical similarities with the VS-20UT04 but differs in package style, utilizing the D-PAK form factor instead of the I-PAK. Both variants share identical electrical ratings and trench technology specifications.
Public confirmed substitute part numbers are not provided in the source material.
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