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VS-30TPS12LHM3 is listed in the Scrs range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is SCR 1.2KV 30A TO247AD. Review the specifications below when checking this part for your BOM.
The VS-30TPS12LHM3 is a high voltage, phase control silicon controlled rectifier (SCR) from Vishay Semiconductors. It features a maximum average on-state current of 20 A and an RMS current of 30 A. The device supports a repetitive peak off-state voltage of 1200 V with a non-repetitive surge current rating of up to 300 A. Operating within a junction temperature range of -40 °C to +125 °C, it utilizes a TO-247AD 3L package.
Verify the specific ordering suffix against official documentation to confirm compliance status. Ensure that the requested part number matches the exact electrical ratings and package dimensions required for the design. Cross-reference the manufacturer's datasheet revision date to validate technical parameters before finalizing procurement specifications.
Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Confirm that gate drive circuits can supply the necessary trigger current across the full operating temperature range. Verify that the system voltage does not exceed the rated repetitive peak off-state voltage under transient conditions.
This component belongs to the VS-30TPS series of high voltage thyristors designed for medium power switching. The product line emphasizes robust performance in phase control applications while maintaining compliance with strict material categorization and environmental directives.
Consult official substitution guides for verified alternatives. Do not assume compatibility based solely on package similarity or generic electrical ratings without validating triggering characteristics and thermal limits.
The maximum non-repetitive surge current is 300 A when no voltage is reapplied during a 10 ms sine pulse.
Yes, the VS-30TPS12LHM3 is AEC-Q101 qualified.
The maximum dV/dt rating is 500 V/μs at the maximum junction temperature with the gate open.
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