VS-3C10ED07T-M3/I

$3.20

Description：RF DIODE SCHOTTKY 650V 81W SMPD
Series：-

SKU:43bbca23fb9d Category: RF Diodes Brand: Vishay

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Product introduction

Product Detailed Parameters

Description：RF DIODE SCHOTTKY 650V 81W SMPD
Series：-
Mfr：Vishay
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Type：Schottky - Single
Voltage - Peak Reverse (Max)：650V
Current - Max：10:00 AM
Capacitance @ Vr, F：43pF @ 400V, 1MHz
Resistance @ If, F：-
Power Dissipation (Max)：81 W
Operating Temperature：-55°C ~ 175°C (TJ)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), Variant
Supplier Device Package：SMPD
Grade：-
Qualification：-

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VS-3C10ED07T-M3/I

Overview

The Vishay VS-3C10ED07T-M3/I is a 650 V Power SiC Gen 3 Merged PIN Schottky Diode rated for 10 A continuous forward current. It utilizes an SMPD 2L surface-mount package with a typical height of 1.7 mm and a minimum creepage distance of 3.6 mm. The device features a maximum operating junction temperature of 175 °C, a typical forward voltage of 1.3 V at 10 A, and a reverse leakage current of 19 μA at 175 °C. Total capacitive charge is specified as 29 nC at 400 V.

Feature Summary

MPS structure provides high ruggedness to forward current surge events
Positive VF temperature coefficient facilitates easy paralleling
Virtually no recovery tail and no switching losses
Temperature invariant switching behavior

Applications

AC/DC PFC
DC/DC ultra high frequency output rectification in FBPS converters
DC/DC ultra high frequency output rectification in LLC converters

Procurement Notes

Verify the specific ordering suffix /I against official documentation to confirm delivery mode and packaging specifications. Ensure that the component meets all applicable environmental compliance standards required for the intended deployment environment before finalizing procurement decisions.

Selection Notes

Select this component when designing circuits requiring hard switching capabilities and efficient operation across wide temperature ranges. Consider its low profile and thermal characteristics for applications where silicon ultrafast recovery limitations are encountered or where high-frequency performance is critical.

Part Context

This part belongs to the Vishay eSMP® Series of wide band gap SiC based diodes. It represents Generation 3 technology designed specifically for high performance and ruggedness in power conversion systems.