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The VS-3C20ED07T-M3/I is a 650 V Power SiC Gen 3 Merged PIN Schottky Diode rated for 20 A continuous forward current. It utilizes an SMPD 2L package with a typical height of 1.7 mm and features a minimum creepage and clearance distance of 3.6 mm. The device exhibits a typical forward voltage of 1.30 V at 25 °C and supports a maximum operating junction temperature of 175 °C. Key electrical parameters include a reverse leakage current of 32 μA at 175 °C, a total capacitive charge of 53 nC at 400 V, and a thermal resistance from junction to mount ranging from 1.0 to 1.30 °C/W.
Verify the specific ordering suffix /I corresponds to the tape and reel delivery mode with a base quantity of 2000 units per 13-inch diameter plastic reel. Confirm compliance requirements such as RoHS compliance and halogen-free status by referencing the manufacturer's material categorization documentation before finalizing procurement orders.
Select this component when designing for hard switching applications requiring high efficiency over a wide temperature range. Ensure the thermal management design accommodates the specified junction-to-mount thermal resistance values. Validate that the system peak repetitive reverse voltage does not exceed the 650 V rating under all operating conditions.
This part belongs to Vishay's eSMP® Series of wide band gap SiC based diodes. It represents Generation 3 technology designed to replace silicon ultrafast recovery diodes in high-performance applications. The SMPD 2L package offers a low-profile solution suitable for space-constrained power electronics designs.
Public confirmed substitute part numbers are not available in the provided datasheet.