VS-3C20ED07T-M3/I

VS-3C20ED07T-M3/I

$5.90
  • Description:RF DIODE SCHOTTKY 650V 114W SMPD
  • Series:-

SKU:30e3506f8330 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF DIODE SCHOTTKY 650V 114W SMPD
  • Series:-
  • Mfr:Vishay
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:Schottky - Single
  • Voltage - Peak Reverse (Max):650V
  • Current - Max:20 A
  • Capacitance @ Vr, F:82pF @ 400V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):114 W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), Variant
  • Supplier Device Package:SMPD
  • Grade:-
  • Qualification:-

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VS-3C20ED07T-M3/I

Overview

The VS-3C20ED07T-M3/I is a 650 V Power SiC Gen 3 Merged PIN Schottky Diode rated for 20 A continuous forward current. It utilizes an SMPD 2L package with a typical height of 1.7 mm and features a minimum creepage and clearance distance of 3.6 mm. The device exhibits a typical forward voltage of 1.30 V at 25 °C and supports a maximum operating junction temperature of 175 °C. Key electrical parameters include a reverse leakage current of 32 μA at 175 °C, a total capacitive charge of 53 nC at 400 V, and a thermal resistance from junction to mount ranging from 1.0 to 1.30 °C/W.

Feature Summary

  • MPS structure provides high ruggedness against forward current surge events
  • Positive VF temperature coefficient facilitates easy paralleling
  • Virtually no recovery tail and no switching losses ensure temperature invariant switching behavior

Applications

  • AC/DC PFC circuits
  • DC/DC ultra high frequency output rectification in FBPS converters
  • DC/DC ultra high frequency output rectification in LLC converters

Procurement Notes

Verify the specific ordering suffix /I corresponds to the tape and reel delivery mode with a base quantity of 2000 units per 13-inch diameter plastic reel. Confirm compliance requirements such as RoHS compliance and halogen-free status by referencing the manufacturer's material categorization documentation before finalizing procurement orders.

Selection Notes

Select this component when designing for hard switching applications requiring high efficiency over a wide temperature range. Ensure the thermal management design accommodates the specified junction-to-mount thermal resistance values. Validate that the system peak repetitive reverse voltage does not exceed the 650 V rating under all operating conditions.

Part Context

This part belongs to Vishay's eSMP® Series of wide band gap SiC based diodes. It represents Generation 3 technology designed to replace silicon ultrafast recovery diodes in high-performance applications. The SMPD 2L package offers a low-profile solution suitable for space-constrained power electronics designs.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided datasheet.

VS-3C20ED07T-M3/IVS-3C20ED07T-M3/I
$5.90
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