VS-43CTQ100-1-M3

Diode Arrays Overview

The VS-43CTQ100-1-M3 is a high-performance Schottky rectifier featuring a center tap configuration with two anodes and a common cathode. It operates at junction temperatures up to 175 °C and utilizes proprietary barrier technology for low reverse leakage. The device is housed in a TO-262AA (TO-262AA) package, rated for a maximum average forward current of 20 A per leg and a repetitive peak reverse voltage of 100 V.

Diode Arrays Feature Summary

• Center tap configuration with dual anodes and a common cathode base
• High temperature operation capability up to 175 °C junction temperature
• Guard ring structure designed for enhanced ruggedness and long-term reliability
• Low forward voltage drop optimized for high frequency switching applications

Diode Arrays Applications

• Switching power supplies
• Freewheeling diodes
• Reverse battery protection circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix '-1' corresponds to the TO-262AA package variant rather than the D2PAK option. Confirm RoHS compliance and halogen-free status as indicated by the M3 suffix. Ensure thermal management aligns with the specified junction-to-case thermal resistance values during installation.

Diode Arrays Selection Notes

Select this component when a center tap topology is required for dual-anode configurations. The 100 V rating suits applications needing moderate reverse voltage blocking. Consider the TO-262AA package for through-hole mounting requirements where higher surge current handling is necessary compared to surface mount alternatives.

Diode Arrays Part Context

This part belongs to the VS-43CTQ...-1-M3 series of high performance Schottky rectifiers manufactured by Vishay Semiconductors. The series includes variants with different voltage ratings such as 80 V and 100 V options, all sharing the same physical package and electrical characteristics except for the breakdown voltage limits.

Diode Arrays Replacement Considerations

VS-43CTQ100S-M3

Diode Arrays FAQ

What is the maximum non-repetitive surge current rating?

The device supports a peak one-cycle non-repetitive surge current of 850 A for a 5 µs sine pulse or 275 A for a 10 ms sine pulse.

How does the junction capacitance behave under reverse bias?

The typical junction capacitance decreases as the reverse voltage increases, measured at 1480 pF at 5 VDC test signal conditions.

Is the device suitable for unclamped inductive switching?

Yes, the datasheet specifies a non-repetitive avalanche energy rating of 7.50 mJ and provides a test circuit for unclamped inductive switching validation.