VS-6CWT04FN

Diode Arrays Overview

The VS-6CWT04FN is a high-performance Schottky diode manufactured by Vishay Semiconductors, housed in a D-PAK (TO-252AA) surface-mount package. It features a common cathode configuration with two independent elements, each rated for a maximum average forward current of 3 A and a peak repetitive reverse voltage of 45 V. The device utilizes submicron trench technology to achieve a typical forward voltage drop of 0.46 V at 3 A and 125 °C. It supports a junction temperature range from -55 °C to 175 °C and offers negligible switching losses.

Diode Arrays Feature Summary

• Submicron trench technology enables extremely low reverse leakage and optimized forward voltage characteristics.
• Increased ruggedness provides reverse avalanche capability with defined RBSOA limits.
• Negligible switching losses support high-frequency operation and high-efficiency applications.

Diode Arrays Applications

• PV cell bypass diodes
• High efficiency SMPS
• Output rectification
• Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official documentation, as variations exist for tape and reel orientation. Confirm RoHS compliance status and halogen-free certification requirements prior to procurement. Ensure thermal management design accounts for the specified junction-to-case thermal resistance values under expected operating conditions.

Diode Arrays Selection Notes

Select this component when designing circuits requiring low forward voltage drop and high thermal stability up to 175 °C. The common cathode dual-element layout is suitable for synchronous rectification or bridge configurations. Evaluate thermal dissipation capabilities based on the duty cycle and ambient temperature constraints of the target application.

Diode Arrays Part Context

This part belongs to the High Performance Schottky Generation 5 series, which includes variants like the VS-6CUT04 in the I-PAK package. The product line emphasizes high efficiency through minimized conduction and switching losses, targeting modern power conversion systems where space and thermal performance are critical constraints.

Diode Arrays Replacement Considerations

The VS-6CUT04 serves as a pin-compatible alternative within the same datasheet, differing only in the I-PAK (TO-251AA) package outline. Verify mechanical footprint compatibility before substitution.

Diode Arrays FAQ

What is the maximum non-repetitive avalanche energy per leg?

The maximum non-repetitive avalanche energy per leg is 14 mJ at TJ = 25 °C with an avalanche current of 1.3 A and inductance of 16 mH.

Does the device support reverse bias safe operating area (RBSOA)?

Yes, the datasheet explicitly states that RBSOA is available and provides graphs for reverse bias safe operating area regarding avalanche current and energy versus pulse duration.

What is the typical junction capacitance per leg?

The typical junction capacitance per leg is 240 pF, measured at VR = 5 VDC with a test signal frequency range of 100 kHz to 1 MHz at 25 °C.