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Product Detailed Parameters
- Description：SOT-227 - SINGLE SWITCH IGBT
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Tube
- IGBT Type：Trench Field Stop
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 75A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-4, miniBLOC
- Supplier Device Package：SOT-227
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：169 A
- Power - Max：781 W
- Current - Collector Cutoff (Max)：100 µA
- Input Capacitance (Cies) @ Vce：-
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Overview
The VS-GT90SA120U is an ultrafast insulated gate bipolar transistor (IGBT) manufactured by Vishay Semiconductors. It features a single switch configuration without an integrated diode and utilizes Trench IGBT technology within a fully isolated SOT-227 package. The device supports a collector-emitter voltage of 1200 V and provides a continuous collector current of 106 A at a case temperature of 90 °C. Typical on-state voltage is 2.17 V at 75 A and 25 °C, with switching capabilities optimized for frequencies between 8 kHz and 30 kHz.
Feature Summary
- Square reverse bias safe operating area (RBSOA)
- Positive VCE(on) temperature coefficient
- Very low internal inductance
- Direct mounting capability on heatsink
Applications
- Uninterruptible power supplies (UPS)
- Switched-mode power supplies (SMPS)
- Welding equipment
- Induction heating systems
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance requirements and packaging details. Ensure that thermal interface materials and mounting torque specifications align with the datasheet recommendations for reliable operation. Confirm availability through authorized distributors as product lifecycles may change.
Selection Notes
Select this component for high-efficiency power conversion applications requiring fast switching speeds. Evaluate the thermal impedance characteristics and ensure adequate heatsinking to maintain junction temperatures within the specified range. Consider the positive temperature coefficient for ease of paralleling multiple devices in higher current configurations.
Part Context
This device belongs to the VS-GT series of ultrafast IGBT modules from Vishay Semiconductors. It is designed for medium to high-power industrial applications where efficiency and reliability are critical. The SOT-227 package allows for plug-in compatibility with other industry-standard modules, facilitating design integration and replacement.
Replacement Considerations
Check for pin-compatible alternatives in the SOT-227 package family. Verify that substitute components meet or exceed the 1200 V rating and 106 A current capacity. Ensure switching losses and thermal resistance parameters are compatible with the existing system design.
