VS-HFA280NJ60CPBF

Diode Arrays Overview

The VS-HFA280NJ60CPbF is a HEXFRED ultrafast soft recovery diode module featuring two common cathode silicon rectifiers in a TO-244 package. It provides a maximum repetitive reverse voltage of 600 V and supports a continuous forward current of 292 A at 25 °C case temperature, or 149 A at 100 °C. The device exhibits low reverse recovery charge (Qrr) and time (trr), with typical values of 490 nC and 92 ns respectively at 25 °C junction temperature under specific test conditions. Maximum power dissipation reaches 657 W at 25 °C.

Diode Arrays Feature Summary

• Ultrafast soft recovery characteristics designed to minimize switching losses and electromagnetic interference in high-frequency power conditioning systems.
• Integrated dual-diode configuration with a common cathode base for simplified thermal management and circuit layout.
• Engineered to eliminate the need for external snubber circuits in most applications due to its soft recovery behavior.

Diode Arrays Applications

• High-frequency power converters
• Motor drives
• Industrial level power conditioning systems

Diode Arrays Procurement Notes

Verify the exact ordering suffix against official Vishay documentation to confirm lead-free status and package variant. Ensure that the requested component matches the specific HEXFRED family designation and electrical ratings provided in the datasheet before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component for applications requiring high current handling and low reverse recovery losses. Evaluate thermal resistance requirements based on the operating case temperature and ensure the mounting surface meets the smoothness specifications outlined in the datasheet to maintain optimal heat dissipation performance.

Diode Arrays Part Context

This part belongs to the HEXFRED family of electron-irradiated silicon rectifiers manufactured by Vishay Semiconductors. The NJ designation indicates the TO-224 physical package form factor, while the C suffix denotes the internal two-diode common cathode circuit topology within the module.

Diode Arrays Replacement Considerations

Consult official Vishay cross-reference documents for verified substitute part numbers. Do not assume compatibility with generic fast recovery diodes without validating reverse recovery charge and thermal resistance parameters.

Diode Arrays FAQ

What is the maximum non-repetitive avalanche energy rating?

The maximum non-repetitive avalanche energy is rated at 2.2 mJ when tested with an inductance of 100 μH and a duty cycle limited by the maximum junction temperature.

How does the junction temperature affect reverse recovery time?

At a junction temperature of 125 °C, the typical reverse recovery time increases to 180 ns, compared to 92 ns at 25 °C, under identical test conditions of 105 A forward current and 200 A/μs dIF/dt.

What are the recommended mounting torque limits?

The center hole mounting torque should be between 12 and 18 N·m, while the terminal torque limits are specified between 3.4 and 4.6 N·m.