VS-MBR2045CT-1-M3

Diode Arrays Overview

The Vishay VS-MBR2045CT-1-M3 is a high-performance Schottky rectifier featuring a common cathode configuration with two independent anodes. It provides a maximum average forward current of 20 A and supports peak repetitive reverse voltages of 35 V or 45 V. The device utilizes proprietary barrier technology to ensure low forward voltage drop and minimal reverse leakage at elevated temperatures, enabling reliable operation up to a 150 °C junction temperature.

Diode Arrays Feature Summary

• Proprietary barrier technology for optimized low reverse leakage at high temperatures
• Guard ring construction designed for enhanced ruggedness and long-term reliability
• High purity epoxy encapsulation providing mechanical strength and moisture resistance
• Qualified according to JEDEC standards and compliant with MSL level 1 requirements

Diode Arrays Applications

• Switching power supplies
• DC-DC converters
• Freewheeling diodes
• Reverse battery protection circuits

Diode Arrays Procurement Notes

Verify the specific package variant required, as the -1 suffix indicates the TO-262AA form factor rather than the standard D2PAK. Confirm that the 45 V rating aligns with the circuit's maximum working peak reverse voltage requirements. Ensure thermal management strategies account for the specified junction-to-case thermal resistance values during continuous operation.

Diode Arrays Selection Notes

Select this component when applications demand high efficiency in low-voltage, high-frequency environments. The dual-anode common-cathode design is suitable for full-wave rectification without requiring a center-tapped transformer. Evaluate the non-repetitive surge current capability against potential inrush conditions to ensure adequate safety margins for the specific load profile.

Diode Arrays Part Context

This part belongs to the VS-MBR20..CT-1-M3 series, which encompasses various voltage ratings within the same physical footprint. The product line is engineered for general-purpose power switching applications where minimizing conduction losses is critical. The TO-262AA package offers a surface-mount alternative to through-hole solutions while maintaining robust thermal dissipation characteristics.

Diode Arrays Replacement Considerations

VS-MBRB2045CT-M3 (D2PAK equivalent)

Diode Arrays FAQ

What is the difference between the VS-MBRB2045CT-M3 and VS-MBR2045CT-1-M3 packages?

The VS-MBRB2045CT-M3 utilizes the D2PAK (TO-263AB) package, whereas the VS-MBR2045CT-1-M3 uses the modified TO-262AA package. Both share identical electrical characteristics but differ in physical dimensions and mounting configurations.

How does the guard ring feature benefit the device performance?

The guard ring structure enhances the ruggedness of the silicon die, contributing to improved long-term reliability and better handling of transient electrical stresses compared to devices without this protection.