Diode Arrays VS-SC120FA120 product image

VS-SC120FA120

$60.02
  • Description:DIODE MOD SIC 1200V 60A SOT-227
  • Series:-

SKU:b67c3a7c4096 Category: Brand:

  
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VS-SC120FA120 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE MOD SIC 1200V 60A SOT-227. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for VS-SC120FA120

  • Description:DIODE MOD SIC 1200V 60A SOT-227
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:2 Independent
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):1200 V
  • Current - Average Rectified (Io) (per Diode):60A
  • Voltage - Forward (Vf) (Max) @ If:1.59 V @ 60 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:180 µA @ 1200 V
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for VS-SC120FA120

VS-SC120FA120

Diode Arrays Overview

The VS-SC120FA120 is a Silicon Carbide Schottky Barrier Diode module from Vishay General Semiconductor. It features a maximum DC reverse voltage of 1200 V and an average rectified current of 60 A per diode in a dual independent configuration. The device utilizes SOT-227-4, miniBLOC packaging for chassis mounting. Key electrical parameters include a forward voltage of 3.6 V at 100 A and zero reverse recovery time, characteristic of majority carrier operation.

Diode Arrays Feature Summary

  • Utilizes Silicon Carbide wide bandgap material for high-temperature stability
  • Features virtually no recovery tail and eliminates switching losses
  • Operates as a majority carrier Schottky diode with zero reverse recovery time

Diode Arrays Applications

  • High-frequency power conversion systems
  • Industrial motor drives requiring low switching loss
  • Uninterruptible power supply (UPS) inverters

Diode Arrays Procurement Notes

Verify the specific datasheet revision to confirm thermal resistance values and pinout configurations before integration. Ensure chassis mounting surfaces are compatible with the SOT-227 package requirements. Confirm that the application voltage does not exceed the 1200 V rating under all transient conditions.

Diode Arrays Selection Notes

Select this component when zero reverse recovery charge is critical for efficiency. The SiC technology supports higher junction temperatures compared to silicon alternatives. Evaluate thermal management needs based on the 3.6 V forward voltage drop at rated current to ensure adequate heat dissipation in the chassis mount setup.

Diode Arrays Part Context

This part belongs to the VS-SCx series of Silicon Carbide Schottky Barrier Diodes. It represents Vishay's focus on wide bandgap semiconductor solutions designed for high-power, high-voltage applications where traditional silicon diodes suffer from excessive switching losses and limited thermal performance.

Diode Arrays Replacement Considerations

Direct replacements must match the 1200 V rating, 60 A current capacity, and SOT-227-4 package. Verify that substitute parts also offer zero reverse recovery characteristics to maintain system efficiency and electromagnetic interference profiles.

VS-SC120FA120VS-SC120FA120
$60.02
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