Diode Arrays VT1045C-M3/4W product image

VT1045C-M3/4W

$0.41
  • Description:DIODE ARR SCHOTT 45V 5A TO-220AB
  • Series:-

SKU:4a3dbe2d7518 Category: Brand:

  
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VT1045C-M3/4W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 45V 5A TO-220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for VT1045C-M3/4W

  • Description:DIODE ARR SCHOTT 45V 5A TO-220AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):45 V
  • Current - Average Rectified (Io) (per Diode):5A
  • Voltage - Forward (Vf) (Max) @ If:580 mV @ 5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Current - Reverse Leakage @ Vr:500 µA @ 45 V
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for VT1045C-M3/4W

VT1045C-M3/4W

Diode Arrays Overview

The VT1045C-M3/4W is a dual low-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration in TO-220AB and TO-262AA packages. Key electrical parameters include a maximum repetitive peak reverse voltage of 45 V, an average forward rectified current of 10 A per device (5.0 A per diode), and a peak forward surge current of 100 A. The typical instantaneous forward voltage is 0.34 V at 2.5 A and 0.41 V at 5.0 A. Operating junction temperature ranges from -40 °C to +150 °C.

Diode Arrays Feature Summary

  • Utilizes Trench MOS Schottky technology for ultra-low forward voltage drop and reduced power losses.
  • Designed for high efficiency operation in switching applications.
  • Halogen-free, RoHS-compliant construction with matte tin plated leads.

Diode Arrays Applications

  • High frequency DC/DC converters
  • Switching power supplies
  • Freewheeling diodes
  • OR-ing diode circuits
  • Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific package variant required: VT1045C-M3/4W corresponds to the TO-220AB case, while VIT1045C-M3/4W corresponds to the TO-262AA case. Confirm compliance requirements such as halogen-free status and RoHS directives against the latest Vishay material categorization documentation before finalizing orders.

Diode Arrays Selection Notes

Select this component for applications requiring low forward voltage drops at moderate currents up to 5 A per diode. Ensure thermal management accounts for the specified thermal resistance values. Validate that the 45 V reverse voltage rating exceeds the maximum circuit transient voltages to prevent breakdown during operation.

Diode Arrays Part Context

This part belongs to Vishay's Dual Low-Voltage Trench MOS Barrier Schottky Rectifier family. It shares technological similarities with other TMBS devices like the VT2045C-M3 but offers distinct current and voltage ratings tailored for specific low-voltage power conversion needs within the same product line.

Diode Arrays Replacement Considerations

Direct substitutes include the VIT1045C-M3/4W for surface mount TO-262AA implementations. Other Vishay dual Schottky rectifiers with matching 45 V ratings and similar current capacities may serve as alternatives if pinout and thermal characteristics are compatible.

Diode Arrays FAQ

What is the maximum operating junction temperature?

The maximum operating junction and storage temperature range is -40 °C to +150 °C.

How is the device configured internally?

The device features a dual common cathode configuration, meaning both diodes share a single cathode terminal.

What is the peak forward surge current rating?

The peak forward surge current (IFSM) is rated at 100 A for an 8.3 ms single half sine-wave superimposed on rated load per diode.

VT1045C-M3/4WVT1045C-M3/4W
$0.41
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