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VT1045C-M3/4W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 45V 5A TO-220AB. Review the specifications below when checking this part for your BOM.
The VT1045C-M3/4W is a dual low-voltage Trench MOS Barrier Schottky (TMBS) rectifier manufactured by Vishay General Semiconductor. It features a common cathode configuration in TO-220AB and TO-262AA packages. Key electrical parameters include a maximum repetitive peak reverse voltage of 45 V, an average forward rectified current of 10 A per device (5.0 A per diode), and a peak forward surge current of 100 A. The typical instantaneous forward voltage is 0.34 V at 2.5 A and 0.41 V at 5.0 A. Operating junction temperature ranges from -40 °C to +150 °C.
Verify the specific package variant required: VT1045C-M3/4W corresponds to the TO-220AB case, while VIT1045C-M3/4W corresponds to the TO-262AA case. Confirm compliance requirements such as halogen-free status and RoHS directives against the latest Vishay material categorization documentation before finalizing orders.
Select this component for applications requiring low forward voltage drops at moderate currents up to 5 A per diode. Ensure thermal management accounts for the specified thermal resistance values. Validate that the 45 V reverse voltage rating exceeds the maximum circuit transient voltages to prevent breakdown during operation.
This part belongs to Vishay's Dual Low-Voltage Trench MOS Barrier Schottky Rectifier family. It shares technological similarities with other TMBS devices like the VT2045C-M3 but offers distinct current and voltage ratings tailored for specific low-voltage power conversion needs within the same product line.
Direct substitutes include the VIT1045C-M3/4W for surface mount TO-262AA implementations. Other Vishay dual Schottky rectifiers with matching 45 V ratings and similar current capacities may serve as alternatives if pinout and thermal characteristics are compatible.
The maximum operating junction and storage temperature range is -40 °C to +150 °C.
The device features a dual common cathode configuration, meaning both diodes share a single cathode terminal.
The peak forward surge current (IFSM) is rated at 100 A for an 8.3 ms single half sine-wave superimposed on rated load per diode.
Explore related parts through Rectifiers, Diodes, Discrete Semiconductor Products, all product categories.