Diode Arrays VT30L60C-E3/4W product image

VT30L60C-E3/4W

$1.93
  • Description:DIODE ARR SCHOTT 60V 15A TO2203
  • Series:-

SKU:2ddd214af06f Category: Brand:

  
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VT30L60C-E3/4W is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 60V 15A TO2203. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for VT30L60C-E3/4W

  • Description:DIODE ARR SCHOTT 60V 15A TO2203
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):60 V
  • Current - Average Rectified (Io) (per Diode):15A
  • Voltage - Forward (Vf) (Max) @ If:600 mV @ 15 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Current - Reverse Leakage @ Vr:4 mA @ 60 V
  • Operating Temperature - Junction:-40°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for VT30L60C-E3/4W

VT30L60C-E3/4W

Diode Arrays Overview

The VT30L60C-E3 is a dual Trench MOS Barrier Schottky (TMBS) rectifier in a TO-220AB package. It features a 60 V maximum repetitive peak reverse voltage and a 30 A average forward rectified current per device, with 15 A per diode. The typical instantaneous forward voltage is 0.43 V at 5.0 A and 25 °C. Peak forward surge current is rated at 200 A. Operating junction temperature ranges from -40 to +150 °C.

Diode Arrays Feature Summary

  • Utilizes Trench MOS Schottky technology for low forward voltage drop and reduced power losses
  • Provides high efficiency operation suitable for demanding power conversion environments
  • Features matte tin plated leads that are solderable per J-STD-002 and JESD 22-B102 standards

Diode Arrays Applications

  • High frequency converters
  • Switching power supplies
  • Freewheeling diodes
  • OR-ing diode circuits
  • DC/DC converters
  • Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific package variant required, as the VT30L60C-E3 designation corresponds to the TO-220AB case while the VIT30L60C-E3 corresponds to TO-262AA. Confirm compliance requirements such as RoHS status and material categorization definitions via official Vishay documentation before finalizing procurement specifications.

Diode Arrays Selection Notes

Select this component for applications requiring common cathode dual diode configurations with high current handling capabilities. Ensure thermal management aligns with the specified junction-to-case thermal resistance of 1.8 °C/W per diode. Validate that the operating environment stays within the -40 to +150 °C junction temperature range for optimal performance.

Diode Arrays Part Context

This part belongs to the TMBS series utilizing advanced trench technology to minimize conduction losses compared to standard Schottky rectifiers. The E3 suffix indicates RoHS compliance and adherence to specific whisker testing standards. It serves as a robust solution for medium-voltage, high-current rectification tasks in industrial and consumer electronics.

Diode Arrays Replacement Considerations

No verified public substitute part numbers are documented in the provided source material.

Diode Arrays FAQ

What is the maximum repetitive peak reverse voltage rating?

The maximum repetitive peak reverse voltage (VRRM) is rated at 60 V.

How is the internal configuration of the diodes arranged?

The device utilizes a common cathode configuration for its two internal diodes.

What is the typical forward voltage drop at 5.0 A?

The typical instantaneous forward voltage (VF) is 0.43 V when tested at an forward current of 5.0 A and a case temperature of 25 °C.

VT30L60C-E3/4WVT30L60C-E3/4W
$1.93
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