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The VT6X1T2R is a dual NPN bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor. It is housed in a VMT6 surface-mount package, equivalent to the SOT-563-6 form factor. The device features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA per transistor. Key electrical characteristics include a DC current gain (hFE) ranging from 120 to 560 at 1 mA and 6 V, and a transition frequency (fT) of 350 MHz. Power dissipation is rated at 150 mW, with an operating temperature range extending up to +150°C.
Verify the specific suffix 'T2R' against the official datasheet to confirm reel packaging specifications. Ensure the component matches the VMT6 package dimensions and terminal arrangement. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Confirm RoHS compliance status through the latest environmental declaration documents provided by ROHM Semiconductor.
Select this component when a dual NPN BJT array is required in a small SMD package. Compare the 50 V VCEO and 100 mA IC limits against circuit demands. Evaluate the 350 MHz fT for high-frequency performance needs. Consider the 150 mW power dissipation limit for thermal management in dense PCB layouts.
This component belongs to ROHM's lineup of complex transistors designed for space-constrained applications. The VMT6 package allows for high-density mounting on printed circuit boards. It serves as a discrete alternative to integrated logic gates or single-transistor solutions requiring multiple units.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pin compatibility and electrical parameters before considering any alternative devices from other manufacturers.