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The W29N01HVSINA is a 1G-bit Single-Level Cell (SLC) NAND Flash memory manufactured by Winbond Electronics. It features an 8-bit parallel interface and is housed in a 48-pin TSOP package. The device operates on a single 2.7V to 3.6V power supply, with active current consumption as low as 25mA and CMOS standby current of 10uA. The memory array totals 138,412,032 bytes, organized into 1,024 erasable blocks of 135,168 bytes each. Each block consists of 64 programmable pages of 2,112 bytes, comprising a 2,048-byte main data area and a 64-byte spare area for error management.
Verify the specific ordering suffix against manufacturer documentation to confirm package type and temperature range. Ensure compatibility with host controller voltage levels and timing requirements before integration. Confirm RoHS compliance status through official datasheets or certificates.
Select this component for designs requiring high-density non-volatile storage with a parallel interface. Consider the 48-pin TSOP package for board space constraints. Verify that the host system supports the required 8-bit bus width and control signals such as CLE, ALE, and RY/#BY.
This part belongs to the W29N01HV series of 1G-bit NAND Flash memories. The series offers industrial temperature ranges and multiple package options including VFBGA variants. It is designed for embedded applications needing reliable data retention and high erase/program cycle endurance.
Check for identical density, interface width, and package dimensions when substituting. Verify electrical characteristics and command set compatibility with the existing system design.