W631GU8MB-09

Memory IC Overview

The W631GU8MB is a 1 Gbit DDR3L SDRAM organized as 16M x 8 with eight internal banks. It supports speeds up to DDR3L-2133 (2133 MT/s) and operates at 1.35V typical, backward compatible to 1.5V. The device uses a 78-ball VFBGA package. Key parameters include CAS Latencies of 5 through 14, burst lengths of 8 or chop 4, and programmable on-die termination. It features differential clock inputs, DLL alignment, ZQ calibration, and asynchronous reset for initialization.

Memory IC Feature Summary

• Supports double data rate architecture with two data transfers per clock cycle using an 8-bit prefetch.
• Includes dynamic ODT mode and programmable termination impedances for improved signal integrity during writes.
• Features system-level timing calibration support via write leveling and Multi Purpose Register read patterns.
• Provides multiple power management modes including precharged power down, active power down, and partial array self-refresh.

Memory IC Applications

• High-speed memory systems requiring low voltage operation
• Industrial applications supporting extended temperature ranges
• Consumer electronics utilizing DDR3L standards

Memory IC Procurement Notes

Verify the specific speed grade suffix required for your target frequency, such as -09 for 2133 MT/s or -15 for 1333 MT/s. Confirm if industrial temperature ratings are necessary by checking for 'I' or 'J' suffixes. Ensure the design accommodates the 78-ball VFBGA footprint and utilizes lead-free materials compliant with RoHS standards. Cross-reference the datasheet revision A03 for accurate electrical characteristics.

Memory IC Selection Notes

Select the appropriate speed bin based on the maximum operating frequency needed, ranging from 667 MHz to 1066 MHz. Consider the required CAS latency settings and whether dynamic ODT is necessary for signal integrity. Verify that the application environment matches the specified case temperature range, noting that standard grades operate from 0°C to 95°C while industrial grades extend lower. Ensure compatibility with 1.35V or 1.5V supply rails.

Memory IC Part Context

This component belongs to Winbond's DDR3L SDRAM portfolio, designed for high-density memory applications. It is part of the W631 series, which offers various organization options and speed grades. The device is manufactured using lead-free processes and is packaged in a compact VFBGA form factor suitable for surface mount assembly in space-constrained designs.

Memory IC Replacement Considerations

Direct substitutes within the same family include other speed grades like W631GU8MB-11 or W631GU8MB-15, provided the frequency requirements align. Industrial variants such as W631GU8MB09I offer wider temperature ranges. Ensure any replacement maintains the 78-ball VFBGA package and 1Gbit capacity.

Memory IC FAQ

Is the W631GU8MB compatible with standard 1.5V DDR3 supplies?

Yes, the device is backward compatible to VDD/VDDQ = 1.5V ± 0.075V, allowing operation with standard DDR3 voltage levels.

What is the function of the Multi Purpose Register (MPR)?

The MPR allows the readout of a predefined system timing calibration bit sequence, supporting system-level timing calibration via write leveling.

How does the device handle refresh operations at high temperatures?

For temperatures above 85°C, the device requires doubling Auto Refresh commands to a 32 ms period. Users must enable Manual Self-Refresh with Extended Temperature Range capability or Auto Self-Refresh mode.