W66AQ6NBQAFJ

Memory IC Overview

The W66AQ6NBQAFJ is a 1 Gbit Low Power Double Data Rate 4X (LPDDR4X) SDRAM manufactured by Winbond Electronics. It features a 64M x 16 organization and utilizes the LVSTL_06 interface. The device operates with a maximum clock frequency of 2.133 GHz and has an access time of 3.6 ns. Supply voltages are specified as 1.06V to 1.17V for core power and 1.7V to 1.95V for I/O. It is housed in a 200-TFBGA package measuring 10x14.5 mm and supports an operating temperature range from -40°C to 105°C.

Memory IC Feature Summary

• Supports LPDDR4X mobile memory technology for enhanced power efficiency
• Utilizes LVSTL_06 interface signaling for high-speed data transfer
• Designed for surface mount installation in compact electronic systems

Memory IC Applications

• Mobile computing devices requiring high-bandwidth memory
• Automotive infotainment and instrument cluster systems
• Industrial control units operating in extended temperature ranges

Memory IC Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS3 compliance and moisture sensitivity level 3 status prior to assembly. Ensure storage conditions adhere to humidity constraints to prevent damage before reflow soldering processes begin.

Memory IC Selection Notes

Select this component when designing systems requiring LPDDR4X performance within a 200-TFBGA footprint. Consider the specific voltage requirements for both core and I/O domains during power budget calculations. Evaluate thermal management strategies to maintain operation within the specified -40°C to 105°C junction temperature range under load.

Memory IC Part Context

This part belongs to the Winbond W66AQ6 series of mobile DRAM solutions. It represents a generation of low-power memory optimized for portable and embedded applications where space and energy consumption are critical constraints compared to previous DDR generations.