W66CP2NQUAFJ TR

Memory IC Overview

The Winbond W66CP2NQUAFJ TR is a 4Gb LPDDR4 Dual-Die-Package (DDP) dynamic random access memory. It features a 32-bit data bus width and operates at a maximum clock frequency of 1.6 GHz. The device is organized as 128M x 32 bits and utilizes a 200-ball WFBGA package. Operating voltage ranges from 1.06 V to 1.95 V, with an industrial temperature range spanning -40°C to +105°C.

Memory IC Feature Summary

• Dual-die architecture for increased density within a single package
• LPDDR4 interface supporting low power consumption modes
• Integrated on-die termination and calibration functions

Memory IC Applications

• Mobile computing platforms requiring high bandwidth
• Industrial embedded systems operating in extreme temperatures
• Automotive infotainment and control units

Memory IC Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm moisture sensitivity level handling procedures during assembly. Ensure compatibility with existing PCB layouts and signal integrity requirements before integration into production designs.

Memory IC Selection Notes

Select this component when a 4Gb capacity with a 32-bit interface is required in a compact form factor. Consider the specific 1.6 GHz speed grade for system timing alignment. Evaluate thermal management capabilities given the extended industrial temperature rating and DDP heat dissipation characteristics.

Memory IC Part Context

This part belongs to the Winbond W66CP2NQ series of LPDDR4 memories. It represents a dual-die configuration offering higher density compared to single-die variants like the W66BP6NB. The series supports advanced power management features typical of modern mobile DRAM standards.

Memory IC Replacement Considerations

Check for availability of equivalent speed grades within the same package family. Verify pin-to-pin compatibility with alternative suppliers if sourcing from secondary markets.