Memory IC W968D6DAGX7I TR product image

W968D6DAGX7I TR

  • Description:IC PSRAM 256MBIT PAR 54VFBGA
  • Series:-
  • Mfr:Winbond Electronics
  • Package:Tape & Reel (TR)

SKU:9e0d28c47dc9 Category: Brand:

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W968D6DAGX7I TR is listed in the Memory IC range at ChipApex. The manufacturer field lists Winbond Electronics. Its product description is IC PSRAM 256MBIT PAR 54VFBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for W968D6DAGX7I TR

  • Description:IC PSRAM 256MBIT PAR 54VFBGA
  • Series:-
  • Mfr:Winbond Electronics
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:PSRAM
  • Technology:PSRAM (Pseudo SRAM)
  • Memory Size:256Mbit
  • Memory Organization:16M x 16
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.95V
  • Operating Temperature:-40°C ~ 85°C (TC)
  • Mounting Type:Surface Mount
  • Package / Case:54-VFBGA
  • Supplier Device Package:54-VFBGA (6x8)
  • Access Time:70 ns

Memory IC datasheet and documents for W968D6DAGX7I TR

W968D6DAGX7I TR

Memory IC Overview

The Winbond W968D6DAGX7I TR is a 256Mb CellularRAM device featuring a 16-bit data bus width and organized as 16M x 16. It operates with VCC and VCCQ supply voltages ranging from 1.7V to 1.95V. The maximum clock rate is 133 MHz, supporting random access times of 70ns. Page mode intrapage read access is 20ns, while interpage access is 70ns. Active current consumption is less than 25mA at 85°C, with standby current at 400μA max and deep power-down typical at 25μA. Operating temperature range spans -40°C to +85°C.

Memory IC Feature Summary

  • Supports asynchronous, page, and burst operations for flexible system integration
  • Incorporates transparent self-refresh mechanism requiring no memory controller support
  • Includes configurable low-power features such as partial array refresh and deep power-down modes

Memory IC Applications

  • Low-power portable applications
  • Cellular devices utilizing industry-standard burst mode Flash interfaces
  • Systems requiring seamless integration with synchronous burst protocols

Memory IC Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and temperature grade. Confirm moisture sensitivity levels and reflow soldering profiles prior to assembly. Ensure voltage requirements align with system design specifications for both core and I/O supplies.

Memory IC Selection Notes

Select this component when high-speed burst access is required alongside low-power standby characteristics. The device serves as a high-density alternative to standard SRAM or Pseudo SRAM. Consider the integrated self-refresh capability if minimizing external control logic complexity is a priority.

Memory IC Part Context

This part belongs to the Winbond CellularRAM family, designed to bridge the performance gap between DRAM density and SRAM speed. It utilizes a DRAM core with an interface compatible with burst-mode Flash standards, enabling direct replacement in many legacy designs without significant board layout changes.

Memory IC Replacement Considerations

Check pinout compatibility with existing designs. Verify that the target system supports the required 1.8V I/O levels and 133 MHz clock speeds.

W968D6DAGX7I TRW968D6DAGX7I TR

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