W9812G6KB-6

Memory IC Overview

The W9812G6KB is a high-speed synchronous dynamic random access memory (SDRAM) organized as 2M words x 4 banks x 16 bits. It delivers a data bandwidth of up to 166M words per second with a maximum clock frequency of 166 MHz. The device operates on a 3.3V ± 0.3V power supply and supports CAS latencies of 2 and 3. Burst lengths are programmable to 1, 2, 4, 8, or full page in sequential or interleave modes. Speed grades include -6 (0°C to 70°C), -6I (-40°C to 85°C), and -6J (-40°C to 105°C).

Memory IC Feature Summary

• Supports self-refresh mode for standard and low-power operation.
• Enables interleaving among internal banks to hide precharging time.
• Features programmable Mode Register for burst length and latency configuration.
• Includes power down and clock suspend modes for reduced power consumption.

Memory IC Applications

• Main memory in high performance applications
• Consumer electronics systems
• Industrial control equipment

Memory IC Procurement Notes

Verify the specific speed grade suffix required for your application temperature range. Confirm that the ordering suffix does not alter the functional specifications unless explicitly stated in the manufacturer's documentation. Cross-reference the part number against the official datasheet revision history to ensure compatibility with existing system designs.

Memory IC Selection Notes

Select the appropriate speed grade based on the operating environment: -6 for commercial temperatures, -6I for industrial ranges, and -6J for extended industrial conditions. Ensure the system design accommodates the 3.3V supply voltage and supports the necessary initialization sequences, including auto-refresh cycles before entering self-refresh mode.

Memory IC Part Context

This component belongs to the Winbond W9812G6KB series of SDRAM devices. It is designed for applications requiring high-speed data access and multiple bank interleaving capabilities. The series includes variants sorted by speed and temperature ratings to suit different market segments.

Memory IC Replacement Considerations

Direct substitutes must match the 16-bit width, 4-bank architecture, and 166MHz clock capability. Verify thermal ratings if replacing a -6 unit with a -6I or -6J variant, as these offer wider operating temperature ranges without changing electrical functionality.

Memory IC FAQ

How is the Auto-precharge function initiated?

Auto-precharge is entered when A10 is set to high during a Read or Write Command. The active bank begins precharging automatically before all burst read cycles complete.

What is the requirement for exiting Self Refresh mode?

To exit Self Refresh, CKE must be returned high. Any subsequent commands can be issued after tXSR from the end of the Self Refresh Command.