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W9864G2JH-6 is listed in the Memory IC range at ChipApex. The manufacturer field lists Winbond Electronics. Its product description is IC DRAM 64MBIT PAR 86TSOP II. Review the specifications below when checking this part for your BOM.
The W9864G2JH-6 is a high-speed synchronous dynamic random access memory (SDRAM) manufactured by Winbond Electronics. It features a storage organization of 512K words x 4 banks x 32 bits, providing a total capacity of 64 Mbit. The device supports a maximum clock frequency of 166 MHz with a CAS latency of 3. It operates within a voltage range of 3 V to 3.6 V and functions at temperatures between 0°C and +70°C. The component utilizes an LVTTL interface and is housed in a TSOP-II-86 package.
Verify the specific speed grade suffix (-6) against the required system clock frequency of 166 MHz. Confirm that the operating environment remains within the specified commercial temperature range of 0°C to +70°C. Ensure the design accommodates the TSOP-II-86 surface mount package dimensions and pitch requirements for proper PCB layout and assembly.
Select this component when a 32-bit wide data bus is necessary for the target architecture. Consider alternative models like the W9864G6 series if a narrower 16-bit interface or different package type is preferred. Verify that the system power supply can maintain stability within the 3V to 3.6V range during peak current draw.
This part belongs to the W9864G2JH series of SDRAMs from Winbond. It shares functional similarities with other speed grades in the family, such as -5 and -7, but is specifically rated for 166 MHz operation. The device is designed to replace older asynchronous DRAMs in systems requiring higher synchronization and bandwidth.
Direct replacements include other speed grades within the same package, such as W9864G2JH-5 or W9864G2JH-7, provided timing constraints are met. Cross-package equivalents like the W9864G6JB series offer similar capacity but differ in pinout and interface width.
Auto-precharge is initiated by setting A10 high during a Read or Write command. The bank begins precharging automatically before the burst cycle completes, allowing the next Activate command to proceed after the required delay.
The DQM0-DQM3 pins act as byte data masks. In read cycles, they place the output buffer in a high-impedance state, while in write cycles, they block data input to specific bytes without affecting the rest of the burst.
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